Physical device simulation of partial dopant-free asymmetric silicon heterostructure solar cell (P-DASH) based on hole-selective Molybdenum oxide (MoOx) with Crystalline Silicon (cSi)

Mehmood, Haris; Nasser, Hisham; Özkol, Engin; Tauqeer, Tauseef; Hussain, Shujaat; Turan, Raşit

doi:10.1109/icengtechnol.2017.8308155

Cited by 9 publications

(6 citation statements)

References 22 publications

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“…Thin films of MoO x can be deposited by several simple fabrication methods, at room or low processing temperature (<200°C), such as thermal evaporation, 8,25,26 atomic layer deposition (ALD), 27 sputtering, 28 or solution process technique 29 . Our simulation studies, using Silvaco TCAD tool, have demonstrated that high‐efficiency values of ~22% and ~25% can be achieved by placing MoO x at the rear (back surface field) 30 and front side (emitter), 31 respectively, of SHJ solar cells based on n‐type c‐Si wafers. Moreover, thin films of MoO x have been integrated into the fabrication of dopant‐free asymmetric heterocontacts (DASH) solar cells 6,11 ; 19.42% efficiency was reported for DASH solar cells on n‐type c‐Si wafer with MoO x and lithium fluoride (LiF) as hole and electron‐selective contacts placed at the front and rear side, respectively 11 .…”

Section: Introductionmentioning

confidence: 97%

On the application of hole‐selective MoO_x as full‐area rear contact for industrial scale p‐type c‐Si solar cells

Nasser

Borra

et al. 2020

Progress in Photovoltaics

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We present the feasibility of integrating substoichiometric molybdenum oxide (MoOx) as hole‐selective rear contact into the production sequence of industrial scale p‐type crystalline silicon (c‐Si) solar cells. Thin films of MoOx are deposited directly on p‐type c‐Si by thermal evaporation at room temperature. It is found that Ag/MoOx/p‐type c‐Si rear contact structure exhibits low contact resistivity and modest surface recombination current density. The attained peak efficiency (η) of the fabricated solar cells is 17.65% with Voc of 626 mV, Jsc of 36.8 mA/cm2, and fill factor (FF) of 76.63%. Next, a complete loss analysis of a MoOx/p‐type Si heterojunction solar cell is carried out for the first time by using Quokka simulation software that employs characteristics of different layers which constitute the fabricated solar cell. Based on this loss analysis, the dominant loss mechanisms are defined and a roadmap to attain the desired highest possible efficiency from industrial scale p‐type c‐Si solar cells with full‐area MoOx hole‐collecting rear contact is explored.

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Section: Introductionmentioning

confidence: 97%

On the application of hole‐selective MoO_x as full‐area rear contact for industrial scale p‐type c‐Si solar cells

Nasser

Borra

et al. 2020

Progress in Photovoltaics

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“…In ref. 77 and 78 the authors verified that the simulated and experimental values for the solar cell characteristics are approximately the same. The authors simulated and fabricated SHJ-p-type aSi:H and measured the open circuit voltage, short circuit current, fill factor and efficiency.…”

Section: Simulation and Mathematical Modelling Of 2d Materialbased So...mentioning

confidence: 71%

Fourth-generation solar cells: a review

Rehman,

Syed,

Khanam

et al. 2023

Energy Adv.

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“…This inversion layer enables the transport of holes from the c-Si layer to the MoO x layer, while hindering the transport of electrons. Such an effect has been demonstrated in simulation results, where tuning the WF from 4.5 eV to 5.7 eV resulted in an increase in efficiency from 1.62% to 23.32% [122]. MoO x is a TMO typically dominated by oxygen vacancy defects, and the WF of the film decreases as the oxygen vacancy concentration increases.…”

Section: Field-effect Passivationmentioning

confidence: 78%

Surface Cleaning and Passivation Technologies for the Fabrication of High-Efficiency Silicon Heterojunction Solar Cells

Shi

Guan

et al. 2023

Materials

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Silicon heterojunction (SHJ) solar cells are increasingly attracting attention due to their low-temperature processing, lean steps, significant temperature coefficient, and their high bifacial capability. The high efficiency and thin wafer nature of SHJ solar cells make them ideal for use as high-efficiency solar cells. However, the complicated nature of the passivation layer and prior cleaning render a well-passivated surface difficult to achieve. In this study, developments and the classification of surface defect removal and passivation technologies are explored. Further, surface cleaning and passivation technologies of high-efficiency SHJ solar cells within the last five years are reviewed and summarized.

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Physical device simulation of partial dopant-free asymmetric silicon heterostructure solar cell (P-DASH) based on hole-selective Molybdenum oxide (MoOx) with Crystalline Silicon (cSi)

Cited by 9 publications

References 22 publications

On the application of hole‐selective MoO_x as full‐area rear contact for industrial scale p‐type c‐Si solar cells

On the application of hole‐selective MoO_x as full‐area rear contact for industrial scale p‐type c‐Si solar cells

Fourth-generation solar cells: a review

Surface Cleaning and Passivation Technologies for the Fabrication of High-Efficiency Silicon Heterojunction Solar Cells

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Physical device simulation of partial dopant-free asymmetric silicon heterostructure solar cell (P-DASH) based on hole-selective Molybdenum oxide (MoOx) with Crystalline Silicon (cSi)

Cited by 9 publications

References 22 publications

On the application of hole‐selective MoOx as full‐area rear contact for industrial scale p‐type c‐Si solar cells

On the application of hole‐selective MoOx as full‐area rear contact for industrial scale p‐type c‐Si solar cells

Fourth-generation solar cells: a review

Surface Cleaning and Passivation Technologies for the Fabrication of High-Efficiency Silicon Heterojunction Solar Cells

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Product

Resources

About

On the application of hole‐selective MoO_x as full‐area rear contact for industrial scale p‐type c‐Si solar cells

On the application of hole‐selective MoO_x as full‐area rear contact for industrial scale p‐type c‐Si solar cells