Physical and chemical mechanisms in oxide-based resistance random access memory

Abstract

In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory

“…Resistive-switching random access memory (RRAM), with its various redox-related chemical effects, is one of the most promising devices for future non-volatile memory applications because of its superior memory performance and scalability down to a few nanometers [11,12,13,14,15]. The cross-point array structure is the most effective structure for high-density memory applications [16,17,18]. Each memory cell is placed at the intersection points of the bit-lines and word-lines, which are perpendicular to each other.…”

“…Each memory cell is placed at the intersection points of the bit-lines and word-lines, which are perpendicular to each other. Unfortunately, the sneak current paths from the cells in a low-resistance state (LRS) can limit the array size [16,17,18]. Therefore, additional nonlinear elements, so-called selection devices, are required to suppress the leakage paths in a cross-point array.…”

Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices

“…The binary metal oxide RRAM, which consists of an insulating layer sandwiched between two metal electrodes, has been considered one of the most promising candidate for the next-generation non-volatile memory due to the simple structure and high performance [8–10]. According to the electrochemical activeness of the electrode and switching mechanism, the metal oxide RRAM is divided into electrochemical metallization memory (ECM), valence change memory (VCM), and thermochemical memory (TCM) [11, 12].…”

Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

“…This is due to fact that the different physical mechanisms such as ionic [29], electrochemical [30], Joule heating [31], raising and lowering Schottky barriers [32] etc are getting associated with the memristor device. The detailed discussion of various conduction mechanisms can be found in [20,33,34].…”