Photovoltaic R&amp;D Program Overview

Feucht, D. L.

doi:10.1007/978-94-009-8423-3_28

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…Polycrystalline and single-crystal thin-film approaches have been pursued to achieve cost-effective thin-film GaAs cells for one-sun applications. Cost-effective cells can be made from polycrystalline GaAs if an efficiency of 10-12% is obtained with an active material thickness of ~5 pm, and from single-crystal GaAs for efficiencies of 17-20% and thicknesses a 1 0 F m (Feucht 1980).…”

Section: Realistic Attainable Conversion Eficienciesmentioning

confidence: 99%

Untitled

Overstraeten¹,

Mertens²,

Nijs³

1982

Rep. Prog. Phys.

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The actual status of research on photovoltaic energy conversion with regard to its possible role in the production of electric power from solar radiation is reviewed. Silicon cells in single-crystalline or semi-crystalline forms are considered to be the dominant devices for the next decade. A variety of possibilities yielding lower fabrication costs and still high conversion efficiencies exist; an order-of-magnitude reduction from the present-day cost level turns out to be a realistic goal. This can be achieved by a combined effort in the fields of silicon material preparation, cell processing and module fabrication.Other longer term viable options are amorphous silicon, thin-film GaAs, 11-VI compounds such as CdS and some advanced approaches using concentrated sunlight. It is believed that ultimately module efficiency will strongly determine the economic viability of a photovoltaic material.

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Section: Realistic Attainable Conversion Eficienciesmentioning

confidence: 99%

Untitled

Overstraeten¹,

Mertens²,

Nijs³

1982

Rep. Prog. Phys.

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“…Although N-type material does show less sensitivity to the harmful effects of Fe contamination, other metallic impurities such as Cr, Au and W can severely impact the lifetime of N-type material (3). However, there is another severe lifetime degradation mechanism that can occur after high temperature processing such as after a boron diffusion and oxidation in a typical IBC-type cell process.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Impact of Oxygen-Related Defects on Lifetime Degradation in N-Type CCZ/CZ Mono-Crystalline Silicon during Cell Processing

2014

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Although N-type CZ material exhibits a high initial lifetime ideally suited to the fabrication of high efficiency solar cells, degradation of wafer lifetime during processing leading to a decrease in cell efficiency can occur due to the growth of pre-existing small oxygen clusters. The mechanism for lifetime degradation associated with oxygen defects is discussed. Lifetime degradation can be avoided and high cell efficiencies achieved by using wafers with a lower initial oxygen concentration.

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Photovoltaic R&D Program Overview

Cited by 2 publications

References 6 publications

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(Invited) Impact of Oxygen-Related Defects on Lifetime Degradation in N-Type CCZ/CZ Mono-Crystalline Silicon during Cell Processing

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