Photovoltaic effects at the interface between amorphous selenium and organic polymers

Abstract

Articles you may be interested inUnderstanding the relationship between molecular order and charge transport properties in conjugated polymer based organic blend photovoltaic devices Band bending in the surface layer of amorphous selenium induced by contact with an insulating organic polymer was detected by photoelectric signals generated at the interface under no external bias. The magnitudes and polarities of the signal varied among samples involving different polymers, and also among samples involving the same polymer with and without doping by an electropositive organic impurity. Details of this behavior, along with the observation that the polarity of the signal was reversed when the method of making the contact between selenium and polymer was altered, indicate that the preferred orientation of polymer molecules containing dipole moments on the selenium surface is the principal cause of the surface potential gradient in the selenium.

Hydrogen bonding at C=Se acceptors in selenoureas, selenoamides and selones

“…Selenium itself is used in the manufacture of glass, stainless steel and photocopiers. The photoconductive effect in selenium is used in many applications like rectifiers, photographic exposure meters and photovoltaic cells (Poborchii et al, 1998;Okumura, 1974). Selenium is also an essential nutrient trace element (Elschenbroich & Salzer, 1992).…”

Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H2O using large-signal photovoltage pulses

“…The field-modulated large signal photovoltage has been used, as it seems to be now a reliable tool for the measurement of surface state distributions (Heilig 1968, 1971, 1974, Lam 1973) which offers some definite advantages discussed in $2.…”

Surface photovoltage phenomena: theory, experiment, and applications

“…Since the photosaturation approach is relatively easy to implement and very simple to interpret, many other studies have utilized it for determining V 0 s values at various semiconductor surfaces. These studies include further investigations of oxygen adsorption/desorption at CdS surfaces [557]; CdS/insulator interfaces [558]; a-Se/organic polymer interfaces [559]; Ambient effects on GaAs(111) surfaces [560± 562]; Effects of different etching reagents on (100) InP surfaces [563]; Effect of organic molecule adsorption on various semiconductors [50±57]; Temperature-dependence of the surface potential in Si [564,565], Ge [567,568], GaAs [569] and SiC [570]; Laser-induced modi®cation of the Si/SiO 2 interface [565]; Band-diagrams of Cd-based II±VI semiconductors [571]; Band-diagrams of various clean [11,289] and real [572±574] Si surfaces; Band-diagrams of a-Si:H surfaces [303,575±577]; Banddiagrams of organic semiconductors [412±414]; and band-diagrams of Ge [573], CdTe [384], CdMnTe [393], and NiO [578] surfaces. In addition, Brillson et al have used the photosaturation technique extensively for characterizing the in¯uence of metallic overlayers on the band bending at CdS [372,373,579,580], GaAs [579,581,582], and ZnO [583] surfaces.…”