Photovoltaic effect in cuprous oxide-copper junctions in relation to the optical absorption spectrum of cuprous oxide

Semi-Conductors with Mobile Ions Show a New Type of I-V Relations

“…These results stand in contradiction to those reported for similar cells for many years [2][3][4][5][6][7] and also in a recent publication [8]. It should be recalled that the Cu|Cu 2 O Schottky junction served as the rectifying device before the Si era [2][3][4][5][6][7] and found interest in solar collector research more recently [9][10][11][12]. Typical I-V relations reported in those references are shown qualitatively in Figs.…”

Cuprous oxide-copper photovoltaic cells formed by high-temperature reduction

“…much smaller than the internal resistance of the cell. This paper discusses in detail the PVE and other measurements on three samples, labelled S1, S2, and 53, prepared under similar conditions as described for a different set of cells in our previous paper [7]. The details of preparation are summarized in Table 1.…”

“…3 a to c the optical absorption curves of Cu,O layer, ace,., are shown for the comparison with the calculated absorption coefficients, &,&I. The absorption coefficient oceXp of the samples polished on both sides was measured in a manner identical to that described in [8] and subsequently used in [7]. The sample was placed at the exit slit of a glass prism double monochromator with a photoniultiplier detector immediately behind the sample.…”

“…However, very little is known of the influence of the bulk properties of Cu,O on the photovoltaic performance of the Cu,O-Cu junctions. I n our previous paper [7] we made a start a t correlating the spectral dependence of the photovoltaic effect (PVE) in Cu,O-Cu cells with the optical absorption spectra of the bulk crystalline cuprous oxide. The formation of the photovoltaically active junction was created [7] by high-temperature reduction of the crystalline surface of Cu,O in the reducing atmosphere of a C0,-CO gas mixture [8].…”

Interface stoichiometry control to improve device voltage and modify band alignment in ZnO/Cu2O heterojunction solar cells

“…2,3,6,7 It is an intrinsic p-type semiconductor with relatively high absorbance in the visible region above the gap. 2 Finally, minority carrier diffusion lengths of 10 mm and hole mobilities of up to 100 cm 2 V À1 s À1 have also been reported for Cu 2 O made by thermal oxidation.…”