Photothermal deflection spectroscopy PDS investigation of optical and thermal properties of BGaAs/GaAs alloys

Ilahi, S.; Saidi, F.; Hamila, R.; Yacoubi, N.; Auvray, Laurent; Maâref, H.

doi:10.1016/j.cap.2012.11.002

Cited by 18 publications

(10 citation statements)

References 14 publications

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“…In the vicinity of the bandgap energy, the photothermal signal phase saturates in both high and low absorption regions. In the case of a thin semiconductor layer, the phase difference between the two saturations depends strongly on its thermal conductivity [20,23] The first conclusion that can be drawn is that thermal conductivity increases with annealing temperature for the two samples presented here, reaching a value above 4 W/m K under the best annealing conditions (800°C) with a 480°C growth temperature. Reduced overall thermal conductivity is usually associated with phonon scattering at boundaries and crystal point defects, both of which impose additional resistance [38,39].…”

Section: Thermal Conductivity Of Gaaspnmentioning

confidence: 82%

“…The optical signal was detected by an Si pin photodiode using a lock-in amplifier. The absorption coefficient (α) was calculated according to the formula For PDS measurements [20,22,23], in order to increase the sensitivity of the photothermal signal, the sample was immersed in paraffin-oil-filled cell. As shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…The amplitudes measured present two saturation levels for decreasing wavelengths below 640 nm and greater than 690 nm. The comparison between experimental curves and the corresponding theoretical ones [20,23] permits us to assign for each wavelength the corresponding optical absorption coefficient resulting in the absorption spectra of the studied GaAsPN absorbers, as shown in Fig. 4.…”

Section: Optical Absorption Spectra and Bandgap Energy Of Gaaspn Absomentioning

confidence: 99%

“…Finally, solving the heat equations in different media, and the application of the boundary conditions of temperature and heat flux at different interfaces allows us to determine an expression for the rise in temperature at the surface of the sample T 0 [22,23] Optical absorption coefficient measured for various As content values (5%, 10%, 30% and 40%) in 100 nm-thick GaAsPN absorbers (set of samples S1). …”

Section: = −mentioning

confidence: 99%

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Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Ilahi

Almosni

Chouchane

et al. 2015

Solar Energy Materials and Solar Cells

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International audienceThe optical absorption and thermal conductivity of GaAsPN absorbers are investigated by means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) for different 100 nm-thick GaAsNP/GaP samples under different growth conditions and various post-growth annealing temperatures. It is first shown that the As content strongly modifies the optical absorption spectrum of the GaAsPN: with a maximum absorption coefficient of 38,000 cm À 1 below the GaP bandgap energy. The optical absorption and thermal conductivities of the samples are then evaluated for various growth and annealing conditions using PDS: the results showing overall agreement with optical absorption spec-troscopy measurements. A significant improvement in optical absorption and thermal conductivity after annealing is demonstrated. The best thermal conductivity measured is equal to 4 W/m K. These results are promising for the development of absorbers in multijunction solar-cell architecture

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Section: Thermal Conductivity Of Gaaspnmentioning

confidence: 82%

Section: Methodsmentioning

confidence: 99%

Section: Optical Absorption Spectra and Bandgap Energy Of Gaaspn Absomentioning

confidence: 99%

Section: = −mentioning

confidence: 99%

See 2 more Smart Citations

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Ilahi

Almosni

Chouchane

et al. 2015

Solar Energy Materials and Solar Cells

Self Cite

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“…The amplitude and phase of the deflected beam are analyzed thanks to a position photodetector sensor linked to a lock in amplifier. In the conventional PTD theory, the expression of the probe beam deflection is given by [19,20]:…”

Section: Photothermal Deflection Techniquementioning

confidence: 99%

Analysis of optical and thermal properties of thermally oxidized mesoporous silicon layers

Hlel

Gaied

Sghaier

et al. 2015

Microporous and Mesoporous Materials

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Diffracted Beams from Metasurfaces: High Chiral Detectivity by Photothermal Deflection Technique

Leahu

Petronijevic

Voti

et al. 2021

Advanced Optical Materials

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Measurements of difference in optical interactions between circularly polarized excitations of opposite handedness (circular dichroism) are highly important for both natural and artificial chiral structures. Here the photothermal deflection technique is proposed as a method to detect the optical chirality of a metasurface, analyzing the diffracted beams by the metasurface itself. Two metasurfaces are investigated, based on Au and Ag. The samples are fabricated by nanosphere lithography, with a tilted deposition of thin metal layer, which produces symmetry‐breaking. The unit cell periodicity of these metasurfaces allows for multiple order diffraction in the 450–520 nm range, which encompasses the emission lines of an Ar laser. The metasurfaces are placed on a mirror and excited by an Ar pump beam at different orientations, laser wavelengths, and circular polarization degree; the probe beam scans the absorption of the diffraction orders back‐reflected from the underlying mirror. In this way, the chiral investigation is simplified by placing the scanning of absorption‐induced thermal effect into the metasurface plane, thus avoiding the transmission/reflection measurements of a specific order, which are done by angular placement of detector. Theoretical and numerical approaches are further developed to reconstruct both thermal and optical behavior of the chirality at the nanoscale.

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Photothermal deflection spectroscopy PDS investigation of optical and thermal properties of BGaAs/GaAs alloys

Cited by 18 publications

References 14 publications

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Analysis of optical and thermal properties of thermally oxidized mesoporous silicon layers

Diffracted Beams from Metasurfaces: High Chiral Detectivity by Photothermal Deflection Technique

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