Photothermal converters with silicon solar cells

Mirzabaev, M.; Mirzabaev, A. M.; Kononerov, V. P.; Tursunov, M. N.; Tukfatullin, O. F.

doi:10.3103/s0003701x07020041

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Cited by 4 publications

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“…The following technological methods are commonly used to create p-i-n structures: epitaxial-diffusion, two-sided-epitaxial and two-sided-diffusion methods [7].…”

Section: Methodsmentioning

confidence: 99%

Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)

Bekpulatov

Rysbaev

Dzhuraev

et al. 2018

Eurasian j. phys. funct. mater.

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In the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n-structure, which has a high thermal sensitivity of 2.3 mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribution profile P and B atoms implanted in the Si gradually decreasing energy. The effect of the subsequent thermal and annealing IR profile on the distribution of the atoms and the characteristics of the temperature sensor was studied.

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“…The following technological methods are commonly used to create p-i-n structures: epitaxial-diffusion, two-sided-epitaxial and two-sided-diffusion methods [7].…”

Section: Methodsmentioning

confidence: 99%