The formation of nanosize silicides films by implantation of B, P, Ba, and alkali metal atoms in Si(111) and Si(100) followed by thermal annealing is studied by electron spectroscopy and slow electron dif fraction methods. It is shown that implantation of ions with a large dose D > 10 16 cm -2 and short term heating lead to the formation of thin silicides films with new surface superstructures: Si(111)-( × )R30°-B, Si(100)-2 × 2Ba, Si(111)-1 × 1P, etc.
The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is shown that the appearance of new surface superstructures is additional confirmation of the formation of thin silicide films with a single crystal structure.
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