On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

Rysbaev, A. S.; Tashatov, A. K.; Dzhuraev, Sh. X.; Khuzhaniyazov, Zh. B.; Arzikulov, G. P.; Nasriddinov, S. S.

doi:10.1134/s1027451011100193

Cited by 6 publications

(2 citation statements)

References 3 publications

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“…As a result, the band gap narrows. Recall that starting from this dose, a noticeable disordering of the near-surface layer and the formation of silicide phases occur [17][18][19]. At an irradiation dose D = 6x10 16 cm -2 , the barium impurity band overlaps with the conduction band and the Fermi level E F appears in the conduction band of ion-implanted Si.…”

Section: -7 (Where Dn/de (E) Is the Derivative Of The Energy Distribu...mentioning

confidence: 98%

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

Imanova¹,

Bekpulatov²

2021

NANO

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The processes of formation of nanoscale silicide films during the implantation of Ba + ions into Si (111) and Si (100) and subsequent thermal annealing were studied by electron spectroscopy. It is shown that implantation of ions with a high dose D > 10 16 cm -2 and short-term heating leads to the formation of thin films of barium monosilicide with new surface superstructures. The optimal modes of formation and band-energy parameters of BaSi films obtained by low-energy high-dose implantation of barium ions in Si are determined. It is shown that BaSi films are a narrow-gap semiconductor with a band gap of 0.7 eV and have good emission and thermoelectric properties corresponding to the solar spectrum and have high photoelectric and thermoelectric characteristics. It should be noted that, in addition to the formation of a chemical compound, the narrowing of the Si band gap upon implantation of large doses of Ba + ions also contributes to defects formed as a result of strong disordering of the crystal lattice.

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Section: -7 (Where Dn/de (E) Is the Derivative Of The Energy Distribu...mentioning

confidence: 98%

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

Imanova¹,

Bekpulatov²

2021

NANO

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“…Quantum size silicide crystals formed on the sili con surface attract considerable attention, first, due to the unceasing tendency to the reduction of the size of microelectronics elements and, second, unique prop erties of silicides-silicon structures, which makes it possible to obtain fast responding elements of elec tronic devices [1][2][3]. Manufacturing of nanomaterials with unique physical, electrochemical, electric, opti cal, catalytic, and other properties is one of priority trends in the development of science and technology, which opens wide prospects for designing new effec tive functional devices and sensor systems.…”

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confidence: 99%

Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

et al. 2014

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The formation of nanosize silicides films by implantation of B, P, Ba, and alkali metal atoms in Si(111) and Si(100) followed by thermal annealing is studied by electron spectroscopy and slow electron dif fraction methods. It is shown that implantation of ions with a large dose D > 10 16 cm -2 and short term heating lead to the formation of thin silicides films with new surface superstructures: Si(111)-( × )R30°-B, Si(100)-2 × 2Ba, Si(111)-1 × 1P, etc.

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Research of Surface and Near – Surface Region Diffusion Doped Silicon by Manganese

Isaev

Gaibov

Eshkulov

et al. 2022

Lecture Notes in Networks and Systems

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On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

Cited by 6 publications

References 3 publications

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

Research of Surface and Near – Surface Region Diffusion Doped Silicon by Manganese

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On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

Cited by 6 publications

References 3 publications

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba&lt;sup&gt;+&lt;/sup&gt; Ions in Si

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba&lt;sup&gt;+&lt;/sup&gt; Ions in Si

Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

Research of Surface and Near – Surface Region Diffusion Doped Silicon by Manganese

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Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si