Photoresponses of Zinc Tin Oxide Thin-Film Transistor

Abstract

<jats:p>In this study, the optical and electrical properties of a zinc tin oxide (ZTO) thin-film transistor (TFT) were investigated. The TFT was fabricated using ZTO as the active layer, which was deposited by a radio frequency magnetron sputtering system, to form an ultraviolet (UV) photodetector. The device has a threshold voltage of 0.48 V, field-effect mobility of 1.47 cm<jats:sup>2</jats:sup>/Vs in the saturation region, on/off drain current ratio of 2×10<jats:sup>6</jats:sup>, and subthreshold swing of 0.45 V/decade in a dark environment. Moreover, as a UV photodetector, the device has a long photoresponse time, responsivity of 0.329 A/W, and rejection ratio of 3.19×10<jats:sup>4</jats:sup> at a gate voltage of -15 V under illumination of wavelength 300 nm.</jats:p>

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnOxdopant layer

“…The μ and SS of the solution-processed Z/S/Z TFT proposed in this work are 14.33 cm 2 V −1 s −1 and 0.13 V dec −1 , respectively, which are also better than the values of 1.47–6.1 cm 2 V −1 s −1 and 0.15–1.39 of the sputtered ZTO TFTs reported in the literature. 21,22,34–36 The above comparison indicates that this study has a significant advancement in ZTO-based TFT technology. The performance of the proposed Z/S/Z TFT is higher than most ZTO-based TFTs fabricated using solution and vacuum sputtering processes.…”

“…This may overcome the bottleneck of m for ZTO-based TFT devices. [20][21][22]29,30,[34][35][36][37][38][39][40]80,81…”

“…The above literature indicates that an additional doping process is usually needed for improving the performance of a ZTO TFT and the mobilities of the solution-processed ZTObased TFTs are 0.2-3.83 cm 2 V À1 s À1 , [29][30][31] which are normally lower than 1.47-6.1 cm 2 V À1 s À1 of vacuum-processed ZTObased TFTs. 21,22,[34][35][36] It seems that there is still room for improvement in the performance of solution-processed ZTO TFTs.…”

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

“…After the parameter optimization, the TFT devices with the ZATO films performed at the 623 K annealing with an Ion/Ioff ratio of 5.55 × 10 7 , an SS value of 0.15 V/decade and a saturation mobility (μsat) of 3.73 cm 2 •V −1 •s −1 . On the basis of the results, the ZATO TFTs show better properties compared to the ZTO TFTs of 2 × 10 6 , 0.45 V/decade and 1.47 cm 2 •V −1 •s −1 by Lun et al [40]. Besides, the SnO2 materials have hygroscopicity, which may reduce the stability of the TFT.…”

The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

“…For example, Martins et al demonstrated Indium-Zinc-Oxide (IZO) TFT with enhanced performances compared with ZnO TFT [11]. Other alloy oxide compounds such as ZTO [12], IGZO [3,13], ITZO [14,15], AZO [16,17], GZO [18,19] etc. have also been published.…”