The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

Abstract

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

A Co-Sputtering Process Optimization for the Preparation of FeGaB Alloy Magnetostrictive Thin Films

“…Magnetron sputtering deposition has the advantages of a large coating area, slow heating of the substrate, good adhesion, and low cost, so is an excellent choice for the preparation of magnetostrictive materials. There are two approaches employing magnetron sputtering using (i) a single cathode composed of FeGaB alloy or (ii) co-sputtering [19,20] with two FeGa and B cathodes. The first method requires high accuracy for the element composition and uniformity of the target, and it is difficult to control the element composition by sputtering parameters, resulting in low target utilization.…”

High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display

“…The non-overlap between the gate and the source electrode causes the reduction in the parasitic capacitance in the top-gated TFTs [ 13 ]. The introduction of the copper process instead of the aluminum process is a promising method to reduce the RC loading in the displays [ 14 ]. However, it is still a challenge for IC researchers to design 4K displays because of the long rising time.…”