The investigation explores the fabrication and characteristics of ZnO nanowire (NW)/p-GaN/ZnO NW heterojunction light-emitting diodes (LEDs). Vertically aligned ZnO NWs arrays were grown on the p-GaN substrate. The n-p-n heterojunction LED was fabricated by combining indium tin oxide/glass substrate with the prepared ZnO NWs/p-GaN substrate. The symmetrical rectifying behavior demonstrates that the heterostructure herein was formed with two p-n junction diodes and connected back to back. The room-temperature electroluminescent emission peak at 415 nm was attributed to the band offset at the interface between n-ZnO and p-GaN and defect-related emission from ZnO and GaN. Finally, the photograph indicated the LED clearly emitted blue light.

Unidirectional single crystalline InN nanoemitters were fabricated on the silicon ͑111͒ substrate via ion etching. These InN nanoemitters showed excellent field emission properties with the threshold field as low as 0.9 V / m based on the criterion of 1 A / cm 2 field emission current density. This superior property is ascribed to the double enhancement of ͑1͒ the geometrical factor of the InN nanostructures and ͑2͒ the inherently high carrier concentration of the degenerate InN semiconductor with surface electron accumulation layer induced downward band bending effect that significantly reduced the effective electron tunneling barrier even under very low external field.

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