A photodiode with 0.55±0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.Single-chip microprocessors can exceed a compute capacity of five trillion floating-point operations per second (5 TFLOPS) 1 therefore requiring an input/output (I/O) bandwidth of 40 Tb/s consistent with the approximately "one byte I/O per flop" rule-of-thumb. 2,3 However, the physical limitations of electrical interconnects -which are constrained by RF losses, electromagnetic interference, power dissipation, and package pin density-typically limit the available bandwidth to a tenth of the peak bandwidth required.Monolithic integration of optical transceivers side-by-side with billion-transistor circuits has the potential to overcome these limitations. However, achieving the necessary transistors' yield together with high photonics performance has been a major challenge. Monolithic approaches developed so far have followed the path of modifying existing electronic processes by adding fabrication steps and materials such as pure germanium for photocarrier generation 4,5 with the risk of shifting the transistor specifications and decreasing the fabrication yield. These processes moreover exploit 90 nm or older nodes which are not currently utilized for building high-performance computers (HPC). 6,7 An alternative approach consists of designing photonic components in existing CMOS nodes without violating any design rule and without requiring any modifications to the process flow -so-called "zerochange CMOS". 8,9 Within the GlobalFoundries (formerly IBM) 45 nm 12SOI node we have recently demonstrated a complete zero-change photonic toolbox comprising waveguides with 5 dB/cm, 8 gratingcouplers, 10 5 Gbps modulators, 11 and 32 GHz photodetectors. 7 These components enabled the first realization of an optical link between a microprocessor and an external memory. 12 However, the responsivity of the first photodiodes was limited to ~0.02 A/W and directly impacted the power efficiency of the link. 12