Photonic crystal microcavity in GaN-on-sapphire slab waveguide for sensor applications

Lis, Szymon; Dylewicz, R.; Ptasiński, Konrad; Patela, S.

doi:10.1117/12.854245

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Cited by 4 publications

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“…18,19 However, it has been recently determined as a potential material system for technologies, such as PhC-based circuits and applications. [20][21][22] AlN as a buffer layer is significant for fabrication of GaN, which is in the previous study has reported that the growth of GaN was deposited on the AlN buffer layer. As well known, the lattice mismatch AlN buffer layer between GaN is 17%.…”

Section: Introductionmentioning

confidence: 99%

Design of 2D GaN photonic crystal based on hole displacement for L3 cavity

Zamani

Nawi

Berhanuddin

et al. 2020

Nanomaterials and Nanotechnology

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In this article, we report modeling, simulation, and analysis of shifting 2D photonic crystal cavity side holes in GaN-AlN-sapphire layered structure. The design was simulated with Lumerical finite-difference time-domain. A lattice constant a, 157 nm, and a hole diameter d, 106 nm, were used in the design. The cavities are based on L3, which we demonstrated by simply shifting two holes away from a line cavity with distances of 132, 142, and 152 nm, respectively. The highest quality factor, Q, value achieved is 2.25 × 104 at 152-nm cavity distance.

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