At higher frequencies (visible and infrared) both the dimensions and the individual metal properties play an important role in determining the resonant response of arrays of SRRs. As a result, a substantial difference between the responses of gold- and Al-based SRR arrays has been observed. Additionally, deposition of gold SRRs onto a substrate typically involves the use of an additional adhesion layer. Titanium (Ti) is the most common adhesive thin-film material used to attach gold onto dielectric/semiconductor substrates. In this paper we investigate the impact of the Ti adhesion layer on the overall response of Au-based nano-scale SRRs. The results quantify the extent to which the overall difference in the resonance frequencies between Au- and Al-based SRRs is due to the presence of the Ti. We show that even a 2-nm-thick Ti layer can red-shift the position of SRR resonance by 20 nm. Finally, we demonstrate that by intentional addition of titanium in the Au-based SRRs, their overall resonant response can be tuned widely in frequency, but at the expense of resonance magnitude.

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We describe a new technique for random surface texturing of a gallium nitride (GaN) light-emitting diode wafer through a mask-less dry etch process. This involves depositing a sub-monolayer film of silica nanospheres (typical diameter of 200 nm) and then subjecting the coated wafer to a dry etch process with enhanced physical bombardment. The silica spheres acting as nanotargets get sputtered and silica fragments are randomly deposited on the GaN epi-layer. Subsequently, the reactive component of the dry etch plasma etches through the exposed GaN surface. Silica fragments act as nanoparticles, locally masking the underlying GaN. The etch rate is much reduced at these sites and consequently a rough topography develops. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) inspections show that random topographic features at the scale of a few tens of nanometres are formed. Optical measurements using angle-resolved photoluminescence show that GaN light-emitting diode material thus roughened has the capability to extract more light from within the epilayers.

This review discusses critical aspects of patterning phase change materials (PCMs), including dry etching, wet clean, and encapsulation, as they dictate the reliability and functionality of the phase change random access memory devices. Specifically, alloys of germanium–antimony–tellurium are used as a model system, and the importance of PCM composition control, critical dimension control, high fidelity pattern transfer, and a system level of ambient control to avoid oxidation that can alter the materials’ functionality are highlighted. The research findings motivate the development of a state-of-the-art integrated system that combines dry etch, wet clean, and encapsulation into one platform to realize consistent and successful patterning of PCMs for future generations of the memory devices.

Inductively coupled plasma dry etching for the fabrication of fine-pitch patterns in a wide range of InP-based materials has been developed. The effect of plasma chemistry (the N2 content in the total Cl2/Ar/N2 gas mixture) on the degree of undercut in the sidewall profile and surface morphology has been studied. Optimization of the etch process conditions produces strong passivation effects on the sidewalls, together with a highly anisotropic process, while still maintaining a good etch rate (560–730 nm/min). Single-step etching using hydrogen silsesquioxane as a resist/hard-mask resulted in high aspect ratio features being obtained (up to 30:1). Low plasma excitation power (inductively coupled plasma machine operating power of 400 W) and moderate ion energy (rf power of 120 W) were utilized to minimize etch-induced damage and provide low scattering losses. Low-loss (<0.3 dB/mm) optical ridge waveguides and high reflectivity and high-wavelength selectivity (Δλ=2 nm) results with 236 nm period sidewall gratings were demonstrated experimentally.