Photomagnetothermal Effect in Semiconductors

Loscoe, Claire; Mette, Herbert

doi:10.1103/physrev.126.1680

Cited by 5 publications

(1 citation statement)

References 7 publications

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“…Under such conditions the solution of (3), (4) shows that the spatial distribution of carriers, electric field, e.m.f., and boundary concentrations of carriers will be determined by where pi = ezt/rni is the mobility of current carriers, t i t,he relaxation time. According to (11) the contribution of the generation-recombination flow of carriers to the e.m.f.…”

Section: Rates Of the Surface Gencration-recombination Of Carriers Fomentioning

confidence: 99%

Peculiarities of an Electromotive Force Arising in a Semiconductor in a Non‐Homogeneous Magnetic Field (I)

Gulamov

Katulevskii

Muminov

1981

Physica Status Solidi (b)

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The possibility of arising of both, longitudinal and transverse electromotive forces (e. in. f.) in a semiconductor placed only into a non-homogeneous magnetic field is shown firstly. The appearance of thee. m. f. is due to the interaction of the spin and orbital magnetic moments of current carriers with an external non-homogeneous magnetic field. The spatial distribution of current carriers, that of the electric field, and the expressions for the longitudinal and transverse e. m. f. are found by using the magnetohydrodynamical approximation. BnepsbIe IIOKa3aHa BOBMOHEHOCTb B03HHHHOBeHHR HaH npOnOJIbHOi8, TaK II IIOIIepeqHOfi 3JIeHTpOnBIIWy~ei8 CIIJIbI (3nC) B IIOJIynpOBOnHHKe, IIOMeWeHHOM TOJIbHO B HeO~HOpOl~HOe MarHIITHOe none. nOHBJIeHIIe 3 n C 06yCJIOBjreHO B3aHMOAefiCTBIIeM CIIIIHOBOI'O II op6u~an-H O r O MarHClTHbIX MOMeHTOB HOCklTeJIefi T O K a C BHel UHHM HeOAHOPOnHbIM MarHIITHbIM noneM. Mcnonbay~ MarHUTorAnponHHaMIIYecKoe npm%nmeHae HaitneHaI np0cTpaHc-r-BeIIHoe pacnpeneneHae HocmeaeB ToKa II a n e~~p~s e c~o r o n o m II BbIpameHAH n n~ npoaonbHoB II nonepewolf 3nc.

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Section: Rates Of the Surface Gencration-recombination Of Carriers Fomentioning

confidence: 99%

Peculiarities of an Electromotive Force Arising in a Semiconductor in a Non‐Homogeneous Magnetic Field (I)

Gulamov

Katulevskii

Muminov

1981

Physica Status Solidi (b)

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On the Theory of Transport Phenomena in Semiconductors in the Presence of Non‐Equilibrium Concentrations

Zawadzki

1963

Physica Status Solidi (b)

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The electric current and the heat flux in a semiconductor are computed for an arbitrary spherical energy band-structure in the presence of electric and magnetic fields, temperature gradients and current-carrier concentration gradients. The classical transport equation is solved by the McClure-Kolodziejczak method. The Einstein relation between the diffusion coefficient and the mobility is generalised for the case of arbitrary spherical ~( k ) dependence and arbitrary degeneration. The photoelectromagnetic effect and its application for measuring the life-time of excess carriers; the Dember effect and the photothermomagnetic effect are studied for arbitrary magnetic fields. I n the appendix the carrier contribution to thermal-conductivity is computed. The general case involving many kinds of current carriers is considered. From these formulae the normal expressions can be obtained if parabolic band structure and lack of degeneration is assumed. It is shown that in all the phenomena discussed the deviations of the band structure from the parabolic form should be taken into consideration. Der elektrische Strom und der WarmefluD in einem Halbleiter werden unter der Annahme einer beliebigen kugelformigen Energiebandstruktur bei Vorhandensein von elektrischen und magnetischen Feldern, sowie Temperaturgradienten und Konzentrationsgradienten von Stromtrkgern berechnet. Die klmsische Transportgleichung wird mit Hilfe der McClure-Kolodziejczak-Methode berechnet. Die Einstein-Beziehung zwischen dem Diffusionskoeffizienten und der Beweglichkeit wird verallgemeinert fur den Fall einer beliebigen c(k)-Abhangigkeit und beliebiger Entartung. Der photoelektromagnetische Effekt und seine Verwendung zur Messung der Lebensdauer von UberschuDtragern, der Dember Effekt und der photothermomagnetische Effekt werden fur beliebige Magnetfelder untersucht. I m Anhang wird der Trageranteil an der Warmeleitfahigkeit berechnet. Ferner wird der allgemeine Fall untersucht, bei dem mehrere Tragerarten vorhanden sind. Aus diesen Formeln konnen die bekannten Ausdrucke erhdten werden, wenn parabolische Bandstruktur und keine Entartung vorliegcn. E s wird gezeigt, daB in allen diskutierten Erscheinungen Abweichungen der Bendstruktur von der parabolischen Form in Betracht gezogen werden miissen. lntroduction As is known the energy band structure of semiconductors may significantly deviate from the simplest case described by the relation E = __. There are two kinds of these deviations. An energy band may be non-spherical, as e.g. bands of germanium and silicon, or non-parabolic as, for example, conductivity bands of InSb, I& or H u e . %DOT [l], KOLODZIEJCZAK [2, 3, 41, KOLODZIEJCZAK and SOSNOWSKI [6], ZAWADZKI [6] and recently also GUSEVA and TSIDILKOVSKI [7] andother authors have shown that deviations from the parabolic structure can have significant influence on the galvanomagnetic, thermoelectric, thermomagnetic and magnetooptical effects. The theory of effects due to the diffusion of carriers in the presence of a magnetic field develops in two di...

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Photoelectromagnetic effect in semiconductors and its applications

Nowak

1987

Progress in Quantum Electronics

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Photomagnetothermal Effect in Semiconductors

Cited by 5 publications

References 7 publications

Peculiarities of an Electromotive Force Arising in a Semiconductor in a Non‐Homogeneous Magnetic Field (I)

Peculiarities of an Electromotive Force Arising in a Semiconductor in a Non‐Homogeneous Magnetic Field (I)

On the Theory of Transport Phenomena in Semiconductors in the Presence of Non‐Equilibrium Concentrations

Photoelectromagnetic effect in semiconductors and its applications

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