The possibility of arising of both, longitudinal and transverse electromotive forces (e. in. f.) in a semiconductor placed only into a non-homogeneous magnetic field is shown firstly. The appearance of thee. m. f. is due to the interaction of the spin and orbital magnetic moments of current carriers with an external non-homogeneous magnetic field. The spatial distribution of current carriers, that of the electric field, and the expressions for the longitudinal and transverse e. m. f. are found by using the magnetohydrodynamical approximation. BnepsbIe IIOKa3aHa BOBMOHEHOCTb B03HHHHOBeHHR HaH npOnOJIbHOi8, TaK II IIOIIepeqHOfi 3JIeHTpOnBIIWy~ei8 CIIJIbI (3nC) B IIOJIynpOBOnHHKe, IIOMeWeHHOM TOJIbHO B HeO~HOpOl~HOe MarHIITHOe none. nOHBJIeHIIe 3 n C 06yCJIOBjreHO B3aHMOAefiCTBIIeM CIIIIHOBOI'O II op6u~an-H O r O MarHClTHbIX MOMeHTOB HOCklTeJIefi T O K a C BHel UHHM HeOAHOPOnHbIM MarHIITHbIM noneM. Mcnonbay~ MarHUTorAnponHHaMIIYecKoe npm%nmeHae HaitneHaI np0cTpaHc-r-BeIIHoe pacnpeneneHae HocmeaeB ToKa II a n e~~p~s e c~o r o n o m II BbIpameHAH n n~ npoaonbHoB II nonepewolf 3nc.
An investigation is made of double injection of electron‐hole plasma. Both the electron and hole gas is supposed to be strongly degenerate and the current is controlled by the carrier space‐charge which is distributed in the base region. It is shown that the current–voltage characteristics, the space distribution of plasma, and that of the electric field for the case of the strongly degenerate plasma depened on the relaxation mechanism of pulse of the current carriers; in the nondegenerate case this dependence is absent. For the set of scattering mechanisms physically possible (dissipation by acoustical and optical vibrations of lattice, by charged and neutral foreign atoms and other) the kinds of current‐voltage characteristics are found.
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