Peculiarities of an Electromotive Force Arising in a Semiconductor in a Non‐Homogeneous Magnetic Field (I)

The spatial distributions of current carriers and thc elcctric field as well as the expression for the electromotive force are found for the homogeneous semiconductor placed only into a nonhomogeneous magnetic field for the case when the semiconductor length in the direction of the magnetic fields gradient far exceeds the bipolar diffusion length of current carriers. The magnetic field is supposed to be non-quantized. It is shown that these characteristics strongly depend on the spatial structure of the magnetic field. The special case of linear coordinate dependence of the magnetic field is considered. rIpocTpaHcmeHHMe pacnpeneneHm Hocmeneii Toxa EI ~J I~K T P H~~C K O~O IIOJIII, a TaHme BbIpaHEeHHe aJIa 3JleKTpO~BZIHEyUea CHJIbI HaZiReHbI AZFI OAHOpOaHOrO IIOJlyIIpOBOaHkiHa, IIOMe~eHHOrO TOJIbKO B HeOAHOpOAHOe MarHHTHOe none, AJlR CJIJ"IaR, IcOI' Aa xJII5Ha 6HnoJIRpHYW T(EI@@Y3110HHYIO AJIIXHy HOCMTeJIea TOHa. MarHmTHoe IIOJle IIpeAIIOJIaraJIOCb HeKBaHTyIOmEIM. nOKa3aH0, YTO 3TEI XapaKTepHCTEIKH CEZnbHO 3aBHCIIT OT IIpOCTpaH-CTBeHHOt CTPYIETYPbI MarHkiTHOrO IIOnH. PaCCMOTpeH WlCTHMfi CJIyYaa JItlHefiHOfi KO-OpZHHS1THOfi 3aBHCEIMOCTH MarHHTHOrO IlOJlII.nonynpoBopma B HanpasneHau rpanuema MarHmHoro IIOJIFI 3~a m r e n b~o npesHIuaeT 1) Timiryazeva 2 B, 700084 Tashkent, USSR. 2) Part I see phys. stat. sol. (b) 108, 567 (1980).

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Peculiarities of an Electromotive Force Arising in a Scemionductor in a Non‐Homogeneous Magnetic Field (II)

Gulamov

Katulevskii

Muminov

1981

Physica Status Solidi (b)

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The Development of an Electromotive Force in a Solid Placed into a Non‐Homogeneous Magnetic Field at Degenerate Statistics of Current Carriers

Azimov

Gulamov

Katulevskii

et al. 1981

Physica Status Solidi (b)

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At present there have been a number of papers /1, 2/ which are devoted to the investigation of the new phenomenon of arising of an electromotive force (e. m. f. ) in a semiconductor placed only into a non-homogeneous magnetic field. It is due to the interaction of the orbital and spin magnetic moments of current carriers with the external non-homogeneous magnetic field. The theoretical consideration of this phenomenon has been carried out provided that the statistics of current carriers is non-degenerate. However, it is necessary to note that this phenomenon can be observed in any solid (for instance, in metal, semimetal, semiconductor, superconductor) containing free current carriers. In many solids (in metals, strongly doped semiconductors, etc. ) the current carriers are degenerate and are described by Fermi-Dirac statistics. This should lead to new interesting peculiarities of this phenomenon in the above mentioned class of solids.The magnetic susceptibility xi of strongly degenerate current carriers including the paramagnetic and diamagnetic components is equal to /3/ Here pB, h, mi, mo are the Bohr magneton, Planck constant, effective mass of a current carrier, and the mass of a free electron, respectively. The subscript i = n, p refers to electrons and holes, whereas the symbol i = n, p represents their local concentrations. The correcting multiplier (1 + 6)-' has been introduced to distinguish the Fermi liquid from the Fermi gas / 4 / .Taking into account the expression (1 ) and solving the magnetohydrodynamic equations for the case when one type of current carriers is strongly predominant 1) Timiryazeva 2B, 73083 Tashkent, USSR.

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Peculiarities of an Electromotive Force Arising in a Semiconductor in a Non‐Homogeneous Magnetic Field (I)

Cited by 2 publications

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Peculiarities of an Electromotive Force Arising in a Scemionductor in a Non‐Homogeneous Magnetic Field (II)

Peculiarities of an Electromotive Force Arising in a Scemionductor in a Non‐Homogeneous Magnetic Field (II)

The Development of an Electromotive Force in a Solid Placed into a Non‐Homogeneous Magnetic Field at Degenerate Statistics of Current Carriers

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