Photoluminescence transitions of GaAs/AlGaAs asymmetric double-well structures

Kim, Yongmin

doi:10.1016/j.cap.2005.07.050

Current Applied Physics

2006

DOI: 10.1016/j.cap.2005.07.050

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Photoluminescence transitions of GaAs/AlGaAs asymmetric double-well structures

Yongmin Kim

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Electronic coupling in ZnO/Mg_x Zn_1−x O double quantum wells grown by pulsed-laser deposition

Zippel

Stölzel

Müller

et al. 2010

phys. stat. sol. (b)

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We report the investigation of electronic coupling in ZnO/ Mg x Zn 1-x O double quantum well structures grown by pulsedlaser deposition (PLD) on a-plane sapphire. A shift of the exciton transition energy to lower energy with decreasing barrier thickness between two coupled quantum wells is observed in cathodoluminescence (CL) and is consistent with effective mass theory. Time-resolved photoluminescence (TRPL) has been performed and shows that the recombination dynamics of coupled double quantum wells (CDQWs) is clearly different from that of ZnO/Mg x Zn 1-x O single quantum wells (SQWs). For SQWs only a monoexponential decay is observed under resonant excitation into (excited) QW states. For the CDQWs a combination between a monoexponential decay and a second process described by a power law was found, attributed to indirect excitons. Asymmetric double quantum wells (ADQWs), consisting of two quantum wells of different thicknesses separated by a Mg x Zn 1-x O barrier layer, show an additional luminescence peak at higher emission energies than the luminescence of the narrow SQWs. Again, time-resolved measurements provide evidence for electronic coupling. We tentatively attribute this peak to an indirect excitonic transition as a consequence of tunneling of heavy holes from the narrow well into the wide quantum well.

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Electronic coupling in ZnO/Mg_x Zn_1−x O double quantum wells grown by pulsed-laser deposition

Zippel

Stölzel

Müller

et al. 2010

phys. stat. sol. (b)

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Doping modulation of self-induced electric field (SIEF) in asymmetric GaAs/GaAlAs/GaAs quantum wells

2022

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Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures

Daoudi

Dhifallah

Ouerghi

et al. 2012

Superlattices and Microstructures

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Photoluminescence transitions of GaAs/AlGaAs asymmetric double-well structures

Cited by 3 publications

References 12 publications

Electronic coupling in ZnO/Mg_x Zn_1−x O double quantum wells grown by pulsed-laser deposition

Electronic coupling in ZnO/Mg_x Zn_1−x O double quantum wells grown by pulsed-laser deposition

Doping modulation of self-induced electric field (SIEF) in asymmetric GaAs/GaAlAs/GaAs quantum wells

Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures

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Photoluminescence transitions of GaAs/AlGaAs asymmetric double-well structures

Cited by 3 publications

References 12 publications

Electronic coupling in ZnO/Mg x Zn1−x O double quantum wells grown by pulsed-laser deposition

Electronic coupling in ZnO/Mg x Zn1−x O double quantum wells grown by pulsed-laser deposition

Doping modulation of self-induced electric field (SIEF) in asymmetric GaAs/GaAlAs/GaAs quantum wells

Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures

Contact Info

Product

Resources

About

Electronic coupling in ZnO/Mg_x Zn_1−x O double quantum wells grown by pulsed-laser deposition

Electronic coupling in ZnO/Mg_x Zn_1−x O double quantum wells grown by pulsed-laser deposition