Doping modulation of self-induced electric field (SIEF) in asymmetric GaAs/GaAlAs/GaAs quantum wells

Khakshoor, Ariel; Belhassen, Jeremy; Karsenty, Avi

doi:10.1016/j.rinp.2021.105093

Cited by 2 publications

(2 citation statements)

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“…The intersubband transitions in quantum wells are responsible for optoelectronic properties. 7 The quantum effects of low-dimensional nanostructures can be modulated by temperature and hydrostatic pressure, 8,9 impurity concentration, 10,11 external electric, 12,13 magnetic, 14,15 and laser fields. 16,17 Various confinement potentials can promote the electrooptic features of quantum well nanostructures due to the benefits of advanced crystal growth techniques.…”

Section: Introductionmentioning

confidence: 99%

“…Stronger confinement of charge carriers in these low-dimensional systems has resulted in interesting physical properties compared with other nanostructures. The intersubband transitions in quantum wells are responsible for optoelectronic properties 7 . The quantum effects of low-dimensional nanostructures can be modulated by temperature and hydrostatic pressure, 8 , 9 impurity concentration, 10 , 11 external electric, 12 , 13 magnetic, 14 , 15 and laser fields 16 , 17 .…”

Section: Introductionmentioning

confidence: 99%

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Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different dressing parameters: a theoretical modeling

Maleki,

Haghighatzadeh,

Attarzadeh

2024

J. Nanophoton.

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A single GaAs/GaAsSb/GaAs quantum well having a valence band profile was described in this study using the V-shaped potential. An external static electric field (E-field) and a high-frequency intense laser irradiation were utilized to examine the first-order linear and third-order nonlinear optical properties. The theoretical modeling was achieved using a compact-density matrix and iterative process in a two-level system framework. The position-dependent effective mass approximation was applied to solve the Schrödinger equation and evaluating the energy states and their corresponding wavefunctions for the two lowest bound states within the quantum well's valence band with regards to a heavy hole. We extended the investigation of the single V-shaped potential by incorporating the effects of the E-field, the well's half-width, and antimony (Sb) content on optical characteristics. The study on the combined effects of the intense laser field and the mentioned factors revealed that the peak positions and amplitudes of the linear and nonlinear optical characteristics were strongly influenced by variation in the laser strength. Specifically, we observed, that under higher laser dressing parameters, the application of the electric field played an important role. This occurred when the impact of the well's half-width and Sb content became prominent at values of lower laser-dressing parameters. It is significant to note that our findings will have potential real-world applications in photonics, optoelectronics, and related areas.

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