Photoluminescence study of Si-doped a-plane GaN grown by MOVPE

Li, Dabing; Ma, Bei; Miyagawa, Reina; Hu, Weiguo; Narukawa, Mitsuhisa; Miyake, Hideto; Hiramatsu, Kazumasa

doi:10.1016/j.jcrysgro.2009.01.041

Cited by 20 publications

(15 citation statements)

References 11 publications

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“…29) A similar redshift of PL peak position was also observed in a-plane GaN, 13) which was ascribed to band gap renormalization. However, the energy position of NBE emission in our work behaved differently (see the inset in Fig.…”

Section: Resultssupporting

confidence: 54%

Properties of Si-Doped a-Plane GaN Grown with Different SiH₄ Flow Rates

Song

Kim

et al. 2011

Jpn. J. Appl. Phys.

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Nonpolar Si-doped a-plane GaN layers were grown using metal organic chemical vapor deposition (MOCVD) with different silane (SiH 4 ) flow rates. The on-axis full width at half maximum (FWHM) of X-ray rocking curves (XRCs) along the c-and m-axis directions showed that Si doping barely affected the anisotropy of a-plane GaN. A decrease in the edge threading dislocations (TDs) with increasing Si doping was confirmed by the decreased off-axis FWHM values of the XRCs. With increasing SiH 4 flow rate, both the carrier concentration and mobility increased through a reduction in the edge dislocation density. The photoluminescence (PL) spectra revealed that the PL peak positions were first slightly redshifted and then blueshifted with increasing carrier concentration. #

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Section: Resultssupporting

confidence: 54%

Properties of Si-Doped a-Plane GaN Grown with Different SiH₄ Flow Rates

Song

Kim

et al. 2011

Jpn. J. Appl. Phys.

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“…55,56 In addition, the PL spectra of both types of samples also demonstrated yellow band emissions (not shown), which are characteristic for the presence of point defect related deep levels in the bandgap in this material. 5,21,57,58 …”

Section: Optical Propertiesmentioning

confidence: 99%

Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

Wilkins

Paskova

Ivanisevic

2013

Journal of Applied Physics

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In-situ functionalization of polar GaN was performed by adding cysteamine to a phosphoric acid etchant in order to study its effect on photoluminescence and oxide formation on the surfaces. The functionalization was characterized by atomic force microscopy, x-ray photoelectron spectroscopy, photoluminescence (PL), and water contact angle measurements. Two sets of polar GaN samples with different dislocation densities were evaluated, thin GaN layers residing on sapphire and thick free-standing GaN separated from sapphire substrate aiming to reveal the effect of material quality on in-situ functionalization. The addition of cysteamine to the phosphoric acid solution was found to result in: (i) decreased surface roughness, (ii) no change to hydrophobicity, (iii) decreased oxygen content especially at high-temperature treatments. The effect of the in-situ functionalization on the PL efficiency was more pronounced in the free-standing sample than in the film residing on the sapphire, which was attributed to a higher crystal quality free from strain.

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“…According to the behavior of emissions 5 and 6 as a function of temperature and FWHMs of the two peaks, we suggest that emission 5 is attributed to a recombination of a BSFs-related DAP [23,26]. Emission 6 is attributed to the recombination of the exciton bound to the BSFs [6,22,27]. Our experimental results show that at low temperature, there are two kinds of BSFs-related emissions existing simultaneously in the spectrum of a-plane GaN grown on r-plane sapphire, which may help to clarify the controversial attributions of the dominant emission.…”

Section: Resultsmentioning

confidence: 84%

“…In the previous studies, the emissions from approximately 3.41 to 3.44 eV were indiscriminately identified as a ''near 3.4 eV emission'', which were controversially attributed to BSFs-related DAP, quantum well formed in BSFs or exciton bound to BSFs [6,[21][22][23]. Since a-plane GaN layers grown on r-plane sapphire contain a high density of BSFs [2,6,9], strong luminescence at around 3.4 eV is expected.…”

Section: Resultsmentioning

confidence: 99%

MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (10–12) r-plane sapphire substrate

Öztürk

Demirel

et al. 2010

Journal of Crystal Growth

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a b s t r a c tNon-polar a-plane GaN film with crystalline quality and anisotropy improvement is grown by use of high temperature AlN/AlGaN buffer, which is directly deposited on r-plane sapphire by pulse flows. Compared to the a-plane GaN grown on AlN buffer, X-ray rocking curve analysis reveals a remarkable reduction in the full width at half maximum, both on-axis and off-axis. Atomic force microscopy image exhibits a fully coalesced pit-free surface morphology with low root-mean-square roughness ( $ 1.5 nm). Photoluminescence is carried out on the a-plane GaN grown on r-plane sapphire. It is found that, at low temperature, the dominant emission at $ 3.42 eV is composed of two separate peaks with different characteristics, which provide explanations for the controversial attributions of this peak in previous studies.

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Photoluminescence study of Si-doped a-plane GaN grown by MOVPE

Cited by 20 publications

References 11 publications

Properties of Si-Doped a-Plane GaN Grown with Different SiH₄ Flow Rates

Properties of Si-Doped a-Plane GaN Grown with Different SiH₄ Flow Rates

Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (10–12) r-plane sapphire substrate

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Photoluminescence study of Si-doped a-plane GaN grown by MOVPE

Cited by 20 publications

References 11 publications

Properties of Si-Doped a-Plane GaN Grown with Different SiH4 Flow Rates

Properties of Si-Doped a-Plane GaN Grown with Different SiH4 Flow Rates

Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (10–12) r-plane sapphire substrate

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Properties of Si-Doped a-Plane GaN Grown with Different SiH₄ Flow Rates

Properties of Si-Doped a-Plane GaN Grown with Different SiH₄ Flow Rates