Bioinspired electronics are rapidly promoting advances in artificial intelligence. Emerging AI applications, e.g., autopilot and robotics, increasingly spur the development of power devices with new forms. Here, we present a strain-controlled power device that can directly modulate the output power responses to external strain at a rapid speed, as inspired by human reflex. By using the cantilever-structured AlGaN/AlN/GaN-based high electron mobility transistor, the device can control significant output power modulation (2.30-2.72 × 10 3 W cm −2) with weak mechanical stimuli (0-16 mN) at a gate bias of 1 V. We further demonstrate the acceleration-feedback-controlled power application, and prove that the output power can be effectively adjusted at real-time in response to acceleration changes, i.e., ▵P of 72.78-132.89 W cm −2 at an acceleration of 1-5 G at a supply voltage of 15 V. Looking forward, the device will have great significance in a wide range of AI applications, including autopilot, robotics, and human-machine interfaces.
This paper presents a signal processing method for the electrophysiology simultaneously recorded during deep brain stimulation (DBS) as a research tool. Regarding the local field potential (LFP) signals recorded during stimulation, a novel method was proposed for removal of stimulation artifacts caused by the much stronger stimulating pulse compared to typical LFP. This artifact suppression method was tested and evaluated in an in vitro situation. The results indicate that the stimulation artifacts are well suppressed by this method. Secondly, this method was tested in vivo in Parkinson's disease (PD) patients. It was used to process the LFP signals recorded intraoperatively from PD patients to preliminarily explore the quantitative dependencies of beta band synchronization variations in the subthalamic nucleus (STNs) on the applied DBS parameters, including stimulation voltage, frequency and pulse width. The results confirm that DBS therapy can suppress excessive beta frequency activity and that the degree of attenuation increases with increasing DBS voltage within a range of 1-3 V and increasing DBS frequency within a range of 60-120 Hz. The proposed artifact suppression method provides technical support for exploring the direct effect of electrical stimulation on the brain activities.
Effects of the nitridation of the r-plane sapphire were investigated on the growth of a-plane GaN. Surface morphology and crystal quality were very sensitive to the nitridated time. A high quality a-plane GaN with a pit free-surface was obtained with nitridation at 1100 °C for 5 min, compared with under- or overnitridation. Nitridated layer were identified as AlN grains with ⟨112¯0⟩ preferred orientation, which acted as the nuclearation layers for a-plane GaN growth. Moreover, the qualities improvements were attributed to enhancing grain uniformity and size with 5 min nitridation.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.