MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (10–12) r-plane sapphire substrate

Yu, Haiming; Öztürk, Mustafa Kemal; Demirel, Pakize; Çakmak, Hüseyin; Özbay, Ekmel

doi:10.1016/j.jcrysgro.2010.08.052

Cited by 10 publications

(6 citation statements)

References 27 publications

(36 reference statements)

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“…Outstanding performance has recently been reported for InGaN/GaN-based LEDs along c -plane orientation 1 , 2 . However, it is commonly known that growing LEDs along the c -plane results in high built-in spontaneous and piezoelectric polarization, which leads to the quantum confined Starks effect (QCSE) 3 – 6 . Therefore, several groups have expended considerable effort in growing epitaxial layers along nonpolar surfaces in the absence of piezoelectric and polarization fields.…”

Section: Introductionmentioning

confidence: 99%

Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN

Kamarundzaman

Shuhaimi

Azman

et al. 2021

Sci Rep

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We demonstrated high-quality single crystalline a-plane undoped-gallium nitride grown on a nonpatterned r-plane sapphire substrate via metal–organic chemical vapor deposition. The effect of four different numbers of sandwiched strain-periodic AlN/GaN multilayers on the strain state, crystal quality, optical and electrical properties was investigated. Field emission scanning electron microscopy and atomic force microscopy showed that the surface morphology was improved upon insertion of 120 pairs of AlN/GaN thin layers with a root-mean-square roughness of 2.15 nm. On-axis X-ray ω-scan rocking curves showed enhanced crystalline quality: the full width at half maximum decreased from 1224 to 756 arcsec along the [0001] direction and from 2628 to 1360 arcsec along the [1–100] direction for a-GaN grown with 120 pairs of AlN/GaN compared to a-GaN without AlN/GaN pairs. Reciprocal space mapping showed that a-plane GaN with a high number of AlN/GaN pairs exhibits near-relaxation strain states. Room-temperature photoluminescence spectra showed that the sample with the highest number of AlN/GaN pairs exhibited the lowest-intensity yellow and blue luminescence bands, indicating a reduction in defects and dislocations. The a-plane InGaN/GaN LEDs with 120 pairs of SSPM-L AlN/GaN exhibited a significant increase (~ 250%) in light output power compared to that of LEDs without SSPM-L AlN/GaN pairs.

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Section: Introductionmentioning

confidence: 99%

Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN

Kamarundzaman

Shuhaimi

Azman

et al. 2021

Sci Rep

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“…Pant et al reported the least mosaicity and compositional inhomogeneity, which could have led to an enhancement in crystal quality. Hence, XRC and RSM measurements should be further utilized to confirm the structural properties, whereby by Williamson-Hall plot analysis could be obtained via the use of off-axis XRC [71,76,77].…”

Section: Photoluminescencementioning

confidence: 99%

“…As for the structural properties, further analysis on off-axis XRC should be implemented to further investigate dislocation and defect increase/decrease and their correlation with the growth conditions. In addition, Williamson-Hall plot analysis can be achieved with the use of off-axis XRC along [1010] and [2020] [65,76,77]. Based on the screened articles, a few studies reported the use of off-axis XRC analysis.…”

Section: Characterizationmentioning

confidence: 99%

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

et al. 2022

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Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficiency and faster response compared to the polar growth direction. To date, however, a systematic literature review of non-polar gallium nitride-based photodetectors has yet to be demonstrated. Hence, the objective of this systematic literature review is to critically analyze the data related to non-polar gallium nitride-based photodetectors. Based on the pool of literature, three categories are introduced, namely, growth and fabrication, electrical properties, and structural, morphological, and optical properties. In addition, bibliometric analysis, a precise open-source tool, was used to conduct a comprehensive science mapping analysis of non-polar gallium nitride-based photodetectors. Finally, challenges, motivations, and future opportunities of non-polar gallium nitride-based photodetectors are presented. The future opportunities of non-polar GaN-based photodetectors in terms of growth conditions, fabrication, and characterization are also presented. This systematic literature review can provide initial reading material for researchers and industries working on non-polar gallium nitride-based photodetectors.

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“…Photonic crystal enhanced solar cells aiming to enhance the efficiency of thin film solar cells by the mechanisms of optical path increase, light trapping, and optical impedance matching have been proposed and studied in the literature mostly for silicon and germanium materials [22,23]. Our group has been working on the growth of InGaN heterostructures [24][25][26]. Previously, we proposed a solar cell design, where the optical absorption from a thin InGaN active layer was enhanced by a photonic crystal etched into the top surface [27].…”

Section: Introductionmentioning

confidence: 99%

Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer

Gundogdu

Gökkavas

Özbay

2014

Advances in Materials Science and Engineering

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MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (10–12) r-plane sapphire substrate

Cited by 10 publications

References 27 publications

Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN

Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer

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