Photoluminescence Study of Deep Level Defects in ZnO Thin Films

Kabir, A.; Bouanane, I.; Boulainine, D.; Zerkout, S.; Schmerber, G.; Boudjema, B.

doi:10.1007/s12633-018-9876-2

Cited by 15 publications

(6 citation statements)

References 35 publications

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“…However, the magnitude of the increase in Zn i is significantly smaller compared to the magnitude of the decrease in the content of V O . The overall defect in the film exhibits a pattern of decreasing and then increasing with the variation in annealing temperature …”

Section: Resultsmentioning

confidence: 99%

“…The overall defect in the film exhibits a pattern of decreasing and then increasing with the variation in annealing temperature. 48 In order to verify the effect of annealing temperature on the compositional properties of the GZO films, XPS analysis was employed. Figure 7 presents the XPS survey spectra of the GZO films after Ar + etching and high-resolution XPS spectra of Zn 2p, Ga 2p, Ga 3d, and O 1s.…”

Section: Resultsmentioning

confidence: 99%

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Effect of Argon Annealing Treatment on Photoelectric Properties of GZO Films Deposited by Atomic Layer Deposition

LiuYang,

Wang,

et al. 2024

J. Phys. Chem. C

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Gallium-doped zinc oxide (GZO) thin films with (100) preferred orientation were prepared on SiO 2 /Si substrates by atomic layer deposition (ALD). Effects of argon annealing temperature on GZO thin films were systematically investigated by X-ray diffraction (XRD), scanning electron spectroscopy (SEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Hall-effect measurement. XRD analysis showed that as the annealing temperature increased from 450 to 850 °C, the crystallization performance was greatly enhanced with the crystallite size of the film increasing from 35 to 65 nm. PL results revealed that the emission of oxygen vacancies in the annealed films was gradually reduced except for the film annealed at 850 °C, which was consistent with the decrease in concentration of oxygen vacancies deduced from XPS measurement. In addition, the resistivity of the annealed GZO films exhibited a noticeable increase up to 3 orders of magnitude. Results demonstrate that the annealing treatment process can obtain high-quality GZO films. This work lays the foundation for practical applications of ALD-GZO films including but not limited to photoelectric, transparent electronic devices.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Effect of Argon Annealing Treatment on Photoelectric Properties of GZO Films Deposited by Atomic Layer Deposition

LiuYang,

Wang,

et al. 2024

J. Phys. Chem. C

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“…PL emissions in the UV range are associated with band to band recombination (electrons and holes) [6]. While emissions in the visible region are associated with defect carrier concentrations: donor (zinc interstitial Zn i and oxygen vacancies V O ) and acceptors (Zinc vacancies V Zn and oxygen interstitial O i ) [7]. However, intensities of photoluminescence emissions, are also related to other physical characteristics such as crystalline quality and microstructure [8].…”

Section: Introductionmentioning

confidence: 99%

“…However, intensities of photoluminescence emissions, are also related to other physical characteristics such as crystalline quality and microstructure [8]. On the other hand, the natural electrical conductivity in ZnO is n-type and is associated to a majority concentration of oxygen vacancies, V O , and zinc interstitials, Zn i [7]. However, electrical conduction in the polycrystalline ZnO is strongly related to the motion of the electrons between grain boundaries (GB model) [9,10].…”

Section: Introductionmentioning

confidence: 99%

ZnO thin films grown at different plasma energies by the laser ablation of metallic Zn with a 532 nm wavelength

Leon

Pérez-Centeno

Gómez-Rosas

et al. 2020

Mater. Res. Express

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In this work, structural, optical and electrical properties of ZnO thin films grown by laser ablation of a Zn metallic target on oxygen atmosphere using the 532 nm emission of the second harmonic of a Nd: YAG laser, are studied. Different mean kinetic energies of the plasma (E k ) at fixed ion density (N p ) were used as control parameters. X-ray diffraction profiles show the presence of a width (002) peak together with a peak associated with the (101) reflection. Changes in E k affect the crystallinity of the samples. An intense PL emission in the visible range of the spectra associated with a majority intrinsic donor defects can be observed. The films showed an unusual low electrical resistivity as compared to the commonly reported values for undoped ZnO thin films.

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“…Depending on the sensing molecule, the electrical conductivity is higher or smaller [7]." ZnO films can be fabricated through several different physical growth methods, such as RF magnetron sputtering [10], pulsed laser deposition [11], or chemical growth techniques as chemical bath deposition [12], dry dispersion process [13,14], or DC electrodeposition [15]. One of the most interesting routes to control the morphological and structural features of ZnO films is electrodeposition.…”

Section: Introductionmentioning

confidence: 99%