“…8 For example, the reaction of the ablated species of the plasma plume with oxygen or nitrogen ambient atmosphere during the plasma plume expansion leads to a very suitable variation of this technique, called reactive-PLD, for the fabrication of oxide and nitride thin films, respectively. Reactive-PLD has been successfully applied to fabricate thin films of oxides such as TiO 2 , 9,10 Y 2 O 3 , 11 Al 2 O 3 , 12 ZnO, 13,14 Ga 2 O 3 , 15 and nitrides such as CN x , AlN, TiN, BN, and GaN (see, for example, the review 16 ). Unfortunately, in some cases, the composition of the films grown by the PLD process could be changed dramatically and unfavorably by many different mechanisms.…”