Photoluminescence spectroscopy of crystalline semiconductors

Gilliland, G. D.

doi:10.1016/s0927-796x(96)00195-7

Cited by 81 publications

(42 citation statements)

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“…As it is well-known, the PL intensity should decrease as temperature increases because the nonradiative mechanisms become dominant [5]. We have observed an unexpected enhancement of the measured PL intensity with increasing of temperature for biased diodes.…”

Section: Introductionsupporting

confidence: 68%

Influence of minority carrier transport in the optical properties of double barrier diodes

et al. 2006

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The aim of this work is to study the importance of minority carrier transport in double barrier diodes (DBD). We propose a theoretical model capable to describe the photoluminescence properties observed in GaAs − Al 0.35 Ga 0.65 As double barrier diodes with the increase of temperature. In this model, we considered that the minority carries (holes) photocreated at the contact of the structure diffuse, drift and then tunnel to the well. To study the influence of previous transport mechanisms, we solved the continuity equation under the influence of an applied bias and an excitation laser light. The theoretical photocurrent and photoluminescence calculations agree quite well with the experimental observations. Within the approaches of our model, we are able to simulate the minority holes mobility from the photocurrent measurements suggesting the use of the experimental technique as a probe of the carrier mobility.

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Section: Introductionsupporting

confidence: 68%

Influence of minority carrier transport in the optical properties of double barrier diodes

et al. 2006

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“…The observed red-shift with increasing temperature follows the well-known Varshni equation, which empirically describes the effect of thermal vibrations on the bandgap of semiconductors. 9,10 Band A also exhibits a highenergy tail, more clearly observed at T ¼ 300 K, which is indicative of transitions that involve the recombination of free carriers 10 and correlates with a high n-type carrier density of $10 19 cm À3 found in these samples through Hall measurements. The high carrier density is thought to originate from native defects in the samples as observed generally in Zn 3 N 2.…”

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confidence: 67%

“…In addition, the overall material quality can be assessed through the photoluminescence yield and its temperature and excitation intensity dependence. 9,10 There have been only a few reports of photoluminescence in Zn 3 N 2 films in the case of both narrow and wide bandgap sample types reported in the literature. 11,12 Furthermore, the temperature dependence of these bands has not been investigated fully, and photoluminescence studies have not to date shed light on the nature and size of the bandgap in Zn 3 N 2 .…”

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confidence: 99%

Temperature dependence of the band gap of zinc nitride observed in photoluminescence measurements

Trapalis

Farrer

Kennedy

et al. 2017

Applied Physics Letters

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We report the photoluminescence properties of DC sputtered zinc nitride thin films in the temperature range of 3.7–300 K. Zinc nitride samples grown at 150 °C exhibited a narrow photoluminescence band at 1.38 eV and a broad band at 0.90 eV, which were attributed to the recombination of free carriers with a bound state and deep-level defect states, respectively. The high-energy band followed the Varshni equation with temperature and became saturated at high excitation powers. These results indicate that the high-energy band originates from shallow defect states in a narrow bandgap. Furthermore, a red-shift of the observed features with increasing excitation power suggested the presence of inhomogeneities within the samples.

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“…The laser pumping produces electrons in CB and holes in VB. Those electrons and holes relax and distribute around CB bottom and VBM, respectively, and then recombine radiatively [227]. PL is sensitive to the band edge electronic transition and the shallow impurities and/or defect levels.…”

Section: Optical Propertiesmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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Photoluminescence spectroscopy of crystalline semiconductors

Cited by 81 publications

References 0 publications

Influence of minority carrier transport in the optical properties of double barrier diodes

Influence of minority carrier transport in the optical properties of double barrier diodes

Temperature dependence of the band gap of zinc nitride observed in photoluminescence measurements

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

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