III-V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly-efficient light-emitting devices on a Si platform. However, the lattice mismatch between III-V and Si generates a high density of threading dislocations at the interface between III-V and Si. Some of these threading dislocations will propagate into the III-V active region and lead to device degradation. By introducing defect filter layers (DFLs), the density of threading dislocations propagating into the III-V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3 μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm 2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm 2 and 68 °C for the reference laser.

Aqueous cream BP used as a leave-on emollient caused severe damage to the skin barrier in volunteers with a previous history of AD. Aqueous cream BP should not be used as a leave-on emollient in patients with AD.

Conventional solar cell efficiencies are capped by the ~31% Shockley–Queisser limit because, even with an optimally chosen bandgap, some red photons will go unabsorbed and the excess energy of the blue photons is wasted as heat. Here we demonstrate a “quantum ratchet” device that avoids this limitation by inserting a pair of linked states that form a metastable photoelectron trap in the bandgap. It is designed both to reduce non-radiative recombination, and to break the Shockley–Queisser limit by introducing an additional “sequential two photon absorption” (STPA) excitation channel across the bandgap. We realise the quantum ratchet concept with a semiconductor nanostructure. It raises the electron lifetime in the metastable trap by ~104, and gives a STPA channel that increases the photocurrent by a factor of ~50%. This result illustrates a new paradigm for designing ultra-efficient photovoltaic devices.

Strain compensated In0.67Ga0.33As/AlAs0.8Sb0.2/InP quantum cascade lasers emitting at wavelengths near 3.1 μm at room temperature have been demonstrated. The lasers operate in pulsed mode with threshold current density of 3.6 kA/cm2 at 80 K and 19.2 kA/cm2 at 295 K. The peak optical power for an as-cleaved 3 mm long and 10 μm wide ridge device exceeds 1 W per facet at 80 K and is around 8 mW at 295 K. The observed laser performance suggests that room temperature operation for these lasers remains possible beyond the predicted threshold for Γ-L intervalley scattering of electrons in the upper laser levels.

ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. Abstract-We present a 18 mW fiber-coupled single-mode superluminescent diode with 85 nm bandwidth for application in optical coherence tomography (OCT). First, we describe the effect of quantum dot (QD) growth temperature on optical spectrum and gain, highlighting the need for the optimization of epitaxy for broadband applications. Then, by incorporating this improved material into a multicontact device, we show how bandwidth and power can be controlled. We then go on to show how the spectral shape influences the autocorrelation function, which exhibits a coherence length of <11 µm, and relative noise is found to be 10 dB lower than that of a thermal source. Finally, we apply the optimum device to OCT of in vivo skin and show the improvement that can be made with higher power, wider bandwidth, and lower noise, respectively.Index Terms-Optical coherence tomography (OCT), quantum dot (QD), skin imaging, superluminescent diodes (SLEDs).

We report a comparison of different capping materials on the intermixing of modulation p-doped InAs/In(Ga)As quantum dots (QD). QD materials with different caps are shown to exhibit significant difference in their optical properties during the annealing process. The selective area intermixing technique is demonstrated to laterally integrate two and three different QD light emitting devices with a single electrical contact. A spectral bandwidth of 240nm centered at 1188nm is achieved in a device with two sections. By calculating the point spread function for the obtained emission spectra, and applying the Rayleigh criteria for resolution, an axial resolution of 3.5μm is deduced. A three section device realizes a spectral bandwidth of 310nm centered at 1145nm. This corresponds to an axial resolution of 2.4μm. Such a small predicted axial resolution is highly desirable in optical coherence tomography system and other coherence-based systems applications.

Abstract-Optical coherence tomography (OCT) exploits the coherent properties of light to permit noninvasive and in situ imaging of biological tissues. By expanding the range of OCT light sources from the traditional telecoms wavelengths to include ∼400 nm gallium nitride (GaN) based superluminescent light emitting diodes (SLEDs) subcellular axial and lateral resolution could be achieved, provided enhanced bandwidth is also achieved. Due to the focus on high-power applications for GaN SLEDs, there has been limited work on increasing the source bandwidth. In this paper, we demonstrate for the first time a ∼400 nm GaN SLED with >10 nm bandwidth employed within an OCT system, where an axial resolution of ∼7 µm is achieved. Bespoke GaN SLEDs suggest that <4 µm axial resolution imaging is imminent for short wavelength devices.Index Terms-Axial resolution, broad bandwidth, gallium nitride superluminescent light emitting diodes, optical coherence tomography.

We demonstrate λ∼3.5 μm and λ∼3.3 μm strain compensated In0.7Ga0.3As/AlAs(Sb)/InP quantum cascade lasers operating in pulse regime at temperatures up to at least 400 K. Peak optical power exceeding 3.5 W at 300 K has been achieved at both wavelengths for 10 μm wide 4 mm long lasers with high reflectivity coated back facets. Threshold current densities of 2.5 kA/cm2 and 3.5 kA/cm2 have been observed at 300 K for the devices emitting at λ∼3.5 μm and λ∼3.3 μm, respectively.