Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique

Abstract

Germanium-rich SiGe bulk single crystals grown by the vertical Bridgman method and by zone meltingThe 4.2 K photoluminescence ͑PL͒ spectra of undoped bulk ͗100͘ InP grown by the liquid-encapsulated vertical Bridgman ͑LE-VB͒ techniques are characterized by three kinds of recombination peaks. A peak exhibited near band-gap energy is attributed to the recombination of bound excitons ͑BEs͒. At the low energy side of BEs, a series of peaks with the same energy interval are due to the recombination of donor-acceptor ͑DA͒ pairs with their longitudinal-optical ͑LO͒ phonon replicas, which is associated with the Zn acceptor. Recombination of deep levels ͑DLs͒ is characterized by a broadband with fine structure at the higher energy side, which seems to be associated with the recombination of native defects and their phonon replicas. The lattice relaxation of DA recombination is smaller while the recombination intensity of DLs is stronger as compared the 4.2 K PL spectra of the LE-VB crystals with those of seed crystals grown by the liquid-encapsulated Czochralski ͑LEC͒ technique. At room temperature, only a broadened peak near band-gap energy is recognized in both the LEC seed and as-grown LE-VB crystals, which is assigned as the recombination of band to bands. The PL mapping results show that the recombination intensity of band to bands in the LE-VB crystal is stronger than that in the LEC crystal. By combining the etched pit density analysis, the stronger PL intensity of band to band recombination in the LE-VB crystal is considered to be due to the lower densities not only of native defects responsible for the recombination of DLs but also of dislocations responsible for the etched pit.

Characteristics of photoluminescence and Raman spectra of InP doped silica fiber

“…Because InP was vaporized in the fiber by the high temperature after suffering from an annealing process in the drawing process, deep level defects are easily generated in ambient of ion P and Fe [16,17]. The broadband emission centered at around 1.08 eV, starting from the typical InP band edge, was well coincided with that reported in bulk InP [18] and In 0.7 Ga 0.3 P/InP structure [19] and the defect center model for the broadband emission [20], in which the recombination of deep level was characterized as such broadband emission. At the room temperature, same tendency was observed as shown in Fig.…”

The Effect of Temperature and Dot Size on the Spectral Properties of Colloidal InP/ZnS Core−Shell Quantum Dots

“…Data from our previous study have been included as well, and it is gratifying to note that those earlier PL peak positions obtained from temperature fits agree with the directly determined values from the present work. To analyze the corresponding size dependence the data in Figure were fitted to the power law expression E P L false( d false) = E P L false( ∞ false) + A P L / d m where E PL ( d ) is the PL peak energy of an InP quantum dot of size d at 0 K, E PL (∞) is the PL peak energy of bulk InP at 0 K (1.375 eV) and A PL is a constant. The result of the fit is interesting: the shift of the peak position, E PL ( d ) − E PL (∞), is found to be close to inversely proportional to the QD size d (to be precise, the fit yields m = 0.9 ± 0.1 and A PL = 1.9 ± 0.2 eV·nm).…”

Recombination mechanism of photoluminescence in InN epilayers

“…The localization energy of bound excitons also needs to be taken into account. In general, the values of the localization energy of bound excitons are several millielectron volts for InX compounds (XZP, As, and Sb), 6-12 meV for GaN, and 16 meV for AlN [24][25][26][27][28][29][30]. Therefore, the binding energy of bound excitons with respect to the free electron-hole pairs has a value of 20 meV at most.…”