Characteristics of photoluminescence and Raman spectra of InP doped silica fiber

Photoluminescence properties of Bi/Al-codoped silica optical fiber based on atomic layer deposition method

“…We combine ALD and MCVD technology to obtain Bi-doped fibers and induced Bi and Al ions into optical fiber core layer by ALD technique with Bi(thd) 3 and H 2 O as Bi and O precursors, and with TMA as Al precursor, respectively. During the preparation process, we investigated its structure features and Photoluminescence properties.…”

“…The reaction mechanism [22] of Bi(thd) 3 and H 2 O can be described with Eqs. (1)-(3): the whole reaction can be described in Eq.…”

“…It is noticed that O 3 originated from O 2 . The temperature of Bi(thd) 3 precursor is controlled about 100-250 • C. In the deposition process, the substrate temperature is around 150-350 • C. And the high pure nitrogen is used as a carrier gas with a flow rate of 100 sccm (standard-state cubic centimeter per minute). Al 2 O 3 is deposited with deposition rate approximating 0.94Å/cycle [21].…”

“…discovered a new infrared luminescence in bismuth-doped silica glass [1]. In recent years, the luminescent materials were demonstrated that they were a promising candidate for optical amplifier in the second telecommunication window [2,3]. Since then the bismuth-doped materials have been studied widely.…”