Photoluminescence of sol–gel-prepared hafnia

Kiisk, V.; Lange, Sven; Utt, Kathriin; Tätte, Tanel; Mändar, Hugo; Силдос, И.

doi:10.1016/j.physb.2009.09.101

Cited by 48 publications

(45 citation statements)

References 16 publications

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“…Yttria doped zirconia, a UV emission centered at 365 nm, an efficient violet emission centered at 400 nm, and a small green emission at 495 nm were observed. It was found that the PL excitation band around 293 nm can be attributed to defect states due to oxygen vacancies that exist at the grain boundaries in the YSZ samples that are an inherent aspect of nanocrystallinity 19,20 .…”

Section: Photoluminescence Studiesmentioning

confidence: 99%

Synthesis and Characterization of Yttrium Stabilized Zirconia Nanoparticles

Maridurai¹,

Balaji²,

Sagadevan

2016

Mat. Res.

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Yttria stabilized zirconia (YSZ) nanoparticles were synthesized by the co-precipitation method. The crystallinity, morphological and optical properties of the YSZ nanoparticles were studied by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), FT-Raman, photoluminescence (PL) spectrum analyses. The grain size and crystal structure of the YSZ was confirmed by XRD. SEM and TEM analyses showed that the synthesized samples were composed of the size of nanometers. The optical property of the synthesized nanoparticles was studied from the photoluminescence spectrum. The dielectric properties such as the dielectric constant, the dielectric loss and AC conductivity of the YSZ nanoparticles were studied in the different frequencies and temperature.

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Section: Photoluminescence Studiesmentioning

confidence: 99%

Synthesis and Characterization of Yttrium Stabilized Zirconia Nanoparticles

Maridurai¹,

Balaji²,

Sagadevan

2016

Mat. Res.

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“…3. In pure monoclinic HfO 2 single crystals this band corresponds to radiation decay of STE [7,8,9]. The PL decay kinetics of UV emission in HfO 2 contains only slow components of ms-μs ranges.…”

Section: Soft X-ray Excitationmentioning

confidence: 97%

“…Moreover, hafnium oxide shows interesting physical and chemical properties. It is widely used in optical fields because of its high refractive index, high optical transparency in the ultraviolet-infrared spectral range, and wide optical band gap (E g = 5.8-6.2 eV) [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…In low-temperature photoluminescence (PL) spectra of HfO 2 crystals or films the emission band of defects can be detected in the region of 2.7-3.1 eV [13][14][15]. An UV intrinsic emission band of self-trapped excitons (STE) was observed in the region of 4.4 eV [7,8,9]. Pure HfO 2 , however, becomes crystalline at temperatures lower than 500° C. For high-k gate dielectrics, an amorphous structure is always preferred because a polycrystalline film can introduce high leakage paths along grain boundaries.…”

Section: Introductionmentioning

confidence: 99%

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Intrinsic and defect related luminescence in double oxide films of Al–Hf–O system under soft X-ray and VUV excitation

Пустоваров

Smirnova

Lebedev

et al. 2016

Journal of Luminescence

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Cite this article as: V.A. Pustovarov, Т.P. Smirnova, M.S. Lebedev, V.A. Gritsenko and M. Kirm, Intrinsic and defect related luminescence in double oxide films of Al-Hf-O system under soft X-ray and VUV excitation, Journal of Luminescence, http://dx.doi.org/10. 1016/j.jlumin.2015.10.053 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. Hafnia films and films mixed with alumina were grown in a flow-type chemical vapor deposition reactor with argon as a carrier gas. In addition, pure alumina films were prepared by the atomic layer deposition method. A strong emission band with the peak position at 4.4 eV and with the decay time in the μs-range was revealed for pure hafnia films. The emission peak at 7.74 eV with short nanosecond decay kinetics was observed in the luminescence spectra for pure alumina films. These emission bands were ascribed to the radiative decay of self-trapped excitons (an intrinsic luminescence) in pure HfO 2 and Al 2 O 3 films, respectively.Along with intrinsic host emission, defect related luminescence bands with a larger Stokes shift were observed. In the emission spectra of the solid solution films (x= 4; 17; 20 at.%) the intrinsic emission bands are quenched and only the luminescence of defects (an anion vacancies) was observed. Based on transformation of the luminescence spectra and nsluminescence decay kinetics, as well as changes in the time-resolved luminescence and 2 luminescence excitation spectra, the relaxation processes in the films of solid solution are discussed.

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“…Wide-gap oxides ZrO 2 and HfO 2 expose well-known intense broadband photoluminescence (PL) around 490 nm. The origin of this emission is still disputable, but is probably due to either oxygen vacancies [3][4][5], Ti impurity centres [6][7][8] or their combined aggre-gates. This PL frequently reveals an afterglow in the time frame of hundreds to thousands of seconds [4,5,[7][8][9], suggesting a perspective for implementation of new persistent phosphors.…”

Section: Introductionmentioning

confidence: 99%

Afterglow and thermoluminescence of ZrO2 nanopowders

et al. 2014

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Abstract:A careful study of the phosphorescence afterglow and the thermoluminescence (TL) of sol-gel-prepared m-ZrO 2 nanocrystalline powders in an extended temperature range −100 to 300°C was carried out. Wavelength-resolved TL proved the existence of a single active luminescence centre in this temperature range. A TL method based on various heating rates was used to derive more reliable trap depths of 0.75, 0.95, 1.25, 1.46 and 1.66 eV whereas deconvolution methods provided somewhat lower values. The most intense room-temperature afterglows (that were easily observable beyond 1000 s) were obtained from samples annealed at 1250 and 1500°C, and were attributed mainly to depopulation of the 1.25 eV traps. PACS

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Photoluminescence of sol–gel-prepared hafnia

Cited by 48 publications

References 16 publications

Synthesis and Characterization of Yttrium Stabilized Zirconia Nanoparticles

Synthesis and Characterization of Yttrium Stabilized Zirconia Nanoparticles

Intrinsic and defect related luminescence in double oxide films of Al–Hf–O system under soft X-ray and VUV excitation

Afterglow and thermoluminescence of ZrO2 nanopowders

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