Photoluminescence of Frank-type defects on the basal plane in 4H–SiC epilayers

Abstract

Frank-type defects on the basal plane in thick 4H–SiC epitaxial layers have been characterized by photoluminescence (PL) spectroscopy and a PL imaging microscopy. The PL emission wavelength of the three kinds of Frank-type defects were determined at ∼424, 457, and 488 nm at room temperature, respectively. The high-resolution PL imaging of the defects was obtained, and the PL emission at the Frank partial dislocations was confirmed in the near infrared region (>700 nm). Correspondence between the optical properties and the microscopic structures of the defects was clarified.

Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers

“…Step (4,4) for the 8H-stacking fault, (5, 3) for the (3, 5) type and (6, 2) for the double Shockley stacking fault, respectively [5][6][7]. Figure 6 shows the peak wavelength of the PL emission of the stacking fault area at RT of the Frank-and Shockley-type stacking faults with the stacking notations and schematics.…”

Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers

“…For SF5 defects, the PL spectrum exhibits four sharp subpeaks at 479, 484.9, 488.2 and 490 nm and correspond to those already reported for an intrinsic Frank-type SF. 18 The spectrum of SF2 defect also shows four sharp subpeaks at 450.6, 455.6, 458.7 and 460 nm. The position of these peaks agrees with the peaks position of multilayered Frank-type SF.…”

“…12 However, the reduction of the off-cut angle generates another type of defects like 3C-inclusions 13 and in-grown SFs. [14][15][16][17][18][19][20] One can see on Table I that the types of SFs are numerous (Single / Double / 8H Shockley SFs, Intrinsic / Multilayered / Extrinsic Frank-type SFs...). [16][17][18][19]21 the carrier lifetime and increase of the leakage current.…”

Photoluminescence of 8H-SiC

“…Degradation problems of bipolar devices have led to many studies of 8H-like stacking faults in 4H-SiC including high resolution transmission microscopy and photoluminescence (PL) [1,2]. In these studies the 8H polytype material appears as very small inclusions of few nm size.…”