Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers

Thierry-Jebali, Nicolas; Kawahara, Chihiro; Miyazawa, Tatsuo; Tsuchida, Hidekazu; Kimoto, Tsunenobu

doi:10.1063/1.4915128

Cited by 13 publications

(7 citation statements)

References 28 publications

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“…defects which mostly show luminescence from 540 to 740 nm. Varying emission of stacking faults is also described in literature [4]. Generally, our UV-PL images of CVD-grown SiC epilayers are of better quality than UV-PL of PVT-grown SiC substrates.…”

Section: Resultssupporting

confidence: 64%

Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

Berwian

Kaminzky

Roßhirt

et al. 2015

SSP

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A new tool for characterizing extended defects in Silicon Carbide (SiC) based on photoluminescence imaging is presented. In contrast to other techniques like Defect Selective Etching (DSE) or X-ray topography this technique is both fast and non-destructive. It is shown that several defect types, especially those relevant for the performance of electronic devices on SiC (i.e. Stacking Faults and Basal Plane Dislocations) can be investigated. The tool is therefore usable in research and development for a quick feedback on process related defect generation as well as in a production environment for quality control.

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Section: Resultssupporting

confidence: 64%

Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

Berwian

Kaminzky

Roßhirt

et al. 2015

SSP

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“…1(a)] is likely an extrinsic Frank-type SF or a single Shockley SF, based on the range of wavelength emissions. 6 However, SF2 [the bright SF in Figs. 1(b)-1(e)] seems to have a broad emission, covering the range of 450-500 nm.…”

Section: Resultsmentioning

confidence: 99%

“…This analysis suggested that a triple Shockley SF or an intrinsic Frank-type SF was the most probable option. 6 It is difficult to distinguish between these two SFs due to the similarity in their emission ranges.…”

Section: Resultsmentioning

confidence: 99%

“…This phenomenon is called forward voltage drift (FVD), and it degrades bipolar devices during their operation. 6 3C-inclusions, also known as down-falls, are one of the main device-killing defects (among others, such as foreign polytypes, micropipes, and BPDs) in 4H-SiC drift layers and are well known in the SiC community. In current state-of-the-art wafers, this defect is present in almost if not all epitaxially grown 4H-SiC wafers.…”

Section: Introductionmentioning

confidence: 99%

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Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach

Hageali

Guthrey

Johnston

et al. 2022

Journal of Applied Physics

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The development of metal oxide semiconductor field effect transistors (MOSFETs) utilizing epitaxially grown 4H-SiC has accelerated in recent years due to their favorable properties, including a high breakdown field, high saturated electron drift velocity, and good thermal conductivity. However, extended defects in epitaxial 4H-SiC can affect both device yields and operational lifetime. In this work, we demonstrate the importance of a multiscale luminescence characterization approach to studying nondestructively extended defects in epitaxial 4H-SiC semiconducting materials. Multiscale luminescence analysis reveals different aspects of excess charge carrier recombination behavior based on the scale of a particular measurement. Combining measurements of the same extended defect area at different scales tells us more about the essential nature of that defect and its microstructure. Here, we use photoluminescence imaging and cathodoluminescence spectrum imaging to investigate the recombination behavior of several different types of extended defects, including stacking faults, inclusions, and basal plane dislocations. A detailed understanding of the optoelectronic properties of extended defects in epitaxial SiC helps elucidate the microstructure of extended defects and can provide pathways to mitigate detrimental changes during device operation related to their evolution, such as the recombination enhanced dislocation glide effect that affects SiC-based MOSFETs.

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“…2 . Photoluminescence (PL) imaging spectroscopy is a useful method to detect defects in SiC wafers, as defects such as stacking faults will have a different spectral PL profile than high quality SiC material 3 . In this way, through a raster scanning process, PL has been demonstrated as an imaging method, with a combination of different spectral bandpass filters or spectroscopy instruments, to isolate and image specific defects in SiC wafers 4,5 .…”

Section: Introductionmentioning

confidence: 99%

Compressed sensing for optical metrology of semiconductor materials and devices

Koutsourakis,

Thompson,

Blakesley

et al. 2023

Modeling Aspects in Optical Metrology IX

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Local defects and non-uniformities in optoelectronic materials and devices can have an impact on their quality and performance characteristics. The development of non-destructive optical metrology methods that provide spatially resolved information on defects and inhomogeneities is crucial for multiple industries that rely on high quality semiconductor materials and devices, from power electronics and LEDs to solar cells and photodiodes. Traditional point-by-point scanning approaches for microscopy and spectroscopy offer mapping solutions that can produce invaluable datasets, nevertheless in most cases measurements are time-consuming, require complex measurement setups or give very weak signals. In this work we present how a compressed sensing approach can benefit optical metrology techniques and the principles of how to adopt and implement a compressed sensing optical system in practice for semiconductor metrology. As examples, we demonstrate through a simulation process a proposed compressed sensing spectral photoluminescence measurement methodology for characterization of semiconductor materials and devices. The focus in this work is specifically wide bandgap semiconductor materials. The features, advantages and challenges of this compressed sensing optical measurement approach are discussed, including the minimum noise levels required for experimental implementation. Different approaches for reconstruction of the spectral PL datacubes are presented.

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Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers

Cited by 13 publications

References 28 publications

Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach

Compressed sensing for optical metrology of semiconductor materials and devices

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