Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

Berwian, Patrick; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Friеdrich, J.; Oppel, S.; Schneider, Adrian; Schütz, Michael

doi:10.4028/www.scientific.net/ssp.242.484

Cited by 17 publications

(12 citation statements)

References 5 publications

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“…Those EDs can be amorphous pockets, different dislocations, stacking faults, different SiC solid-phase (polytype) inclusions, clusters, and so on. More could be stated about the ED nature investigating the irradiated structure by electron microscopy and optical methods [29]- [31]. However, it should be clearly stated that the experiments were performed using a specific device type from one manufacturer; as both design as well as the resulting efficient carrier concentration in the specific areas will vary between device types and manufacturers, the results cannot be transferred to all SiC power devices without further analysis.…”

Section: Discussion On Selc Mechanismmentioning

confidence: 99%

Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

Martinella

Ziemann

Stark

et al. 2020

IEEE Trans. Nucl. Sci.

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Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain-source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in the p-n junction region. This provides useful insights into the understanding of basic phenomena of single-event effects in SiC power devices.

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Section: Discussion On Selc Mechanismmentioning

confidence: 99%

Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

Martinella

Ziemann

Stark

et al. 2020

IEEE Trans. Nucl. Sci.

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“…The 4H-SiC structure has been shown to have several defects and PL peaks in the band gap. The PL spectra in 4H-SiC originate from a combination of phonon-instigated electronic transitions caused by defects in SiC [9][10][11]. This observation of luminescence quenching is not evidence of electronic doping [12,13].…”

Section: Introductionmentioning

confidence: 87%

Defect-Induced Luminescence Quenching of 4H-SiC Single Crystal Grown by PVT Method through a Control of Incorporated Impurity Concentration

2022

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The structural defect effect of impurities on silicon carbide (SiC) was studied to determine the luminescence properties with temperature-dependent photoluminescence (PL) measurements. Single 4H-SiC crystals were fabricated using three different 3C-SiC starting materials and the physical vapor transport method at a high temperature and 100 Pa in an argon atmosphere. The correlation between the impurity levels and the optical and fluorescent properties was confirmed using Raman spectroscopy, X-ray diffraction, inductively coupled plasma atomic emission spectroscopy (ICP-OES), UV-Vis-NIR spectrophotometry, and PL measurements. The PL intensity was observed in all three single 4H-SiC crystals, with the highest intensities at low temperatures. Two prominent PL emission peaks at 420 and 580 nm were observed at temperatures below 50 K. These emission peaks originated from the impurity concentration due to the incorporation of N, Al, and B in the single 4H-SiC crystals and were supported by ICP-OES. The emission peaks at 420 and 580 nm occurred due to donor–acceptor-pair recombination through the incorporated concentrations of nitrogen, boron, and aluminum in the single 4H-SiC crystals. The results of the present work provide evidence based on the low-temperature PL that the mechanism of PL emission in single 4H-SiC crystals is mainly related to the transitions due to defect concentration.

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“…4c [15,46]. Berwian et al construct a defect luminescence scanner based on UV-PL to clearly inspect BPDs, SFs and polytype inclusions [62]. Tajima et al use PL with a variety of excitation wavelengths ranging from deep UV to visible and NIR to inspect TEDs, TSDs, SFs and examine the correlation between the PL and etched pit patterns [63].…”

Section: Photoluminescence (Pl)mentioning

confidence: 99%

Defect Inspection Techniques in SiC

et al. 2022

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With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence of so-called killer defects, formed during the process of crystal growth. In parallel to the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process. In this review article, we provide an outlook on SiC defect inspection technologies and the impact of defects on SiC devices. This review also discusses the potential solutions to improve the existing inspection technologies and approaches to reduce the defect density, which are beneficial to mass production of high-quality SiC devices.

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Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

Cited by 17 publications

References 5 publications

Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

Defect-Induced Luminescence Quenching of 4H-SiC Single Crystal Grown by PVT Method through a Control of Incorporated Impurity Concentration

Defect Inspection Techniques in SiC

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