Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: impact of nonradiative recombination

Vinnichenko, M. Ya.; Makhov, I S; Selivanov, A. V.; Firsov, D. A.; Vorobjev, L. E.; Shterengas, L.; Belenky, Gregory

doi:10.1088/1742-6596/816/1/012017

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…[24,25] Carrier heating in QWs under optical and current injection has been studied by Belenky and co-workers. [26,27] However, a phenomenon of carrier localization in quaternary InGaAsSb/AlGaAsSb MQWs, especially the effect of RTA, is rarely studied. Therefore, the study of localized carriers emission with RTA treatment for the optimization of optical and structural properties of quaternary InGaAsSb/AlGaAsSb MQWs is useful.…”

Section: Introductionmentioning

confidence: 99%

Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

Jia

Wang

Azad

et al. 2021

Physica Rapid Research Ltrs

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An effect of rapid thermal annealing (RTA) on emission properties of InGaAsSb/AlGaAsSb multiple quantum wells (MQWs) grown by molecular‐beam epitaxy is systematically investigated by photoluminescence (PL) spectra. The emission from free‐exciton and localized carriers is confirmed in as‐grown InGaAsSb/AlGaAsSb MQWs using temperature and excitation power‐dependent PL spectra. The results of RTA for different times at a fixed temperature of 350 °C are analyzed. The PL intensity of InGaAsSb/AlGaAsSb MQWs is increased after an RTA process, and the peak position is slightly blueshifted at 300 K. Low‐temperature PL spectra show improved emission of free‐exciton and deteriorated localized carriers recombination at an annealing time of 60 s. Double crystal X‐ray diffraction (DCXRD) measurements are also carried out to study the crystalline quality before and after annealing. These results indicate that a suitable RTA treatment is effective in reducing the densities of nonradiative recombination centers, which implies an improved optical property and crystalline quality of quantum well structures. This study provides valuable understanding of recombination processes and improvement of optical properties by RTA treatment in InGaAsSb/AlGaAsSb MQWs.

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Section: Introductionmentioning

confidence: 99%

Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

Jia

Wang

Azad

et al. 2021

Physica Rapid Research Ltrs

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Study of nanocarbon thin-film field-electron emitters by Raman spectroscopy

Osipov

Besedina

Gabdullin

et al. 2019

J. Phys.: Conf. Ser.

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Raman spectroscopy was used to study the features of the electron-phonon interaction in thin carbon films that are capable of low-field emission of electrons. It was found that in the Raman spectra of samples with this ability the characteristic peaks of carbon were almost completely suppressed, and also a wide photoluminescence band could be present. At the same time, the Raman spectra of non-emitting samples had the form typical of graphite-like carbon spectrum. This observation is in accordance with the two-barrier model of low-field electron emission from thin films of considered type, corresponding to which their emissive capability is maintained by the presence of hot electrons. Thus, in thin films consisting of numerous isolated carbon islands (nanoclusters) the extraction of electrons into the vacuum is facilitated by prolonged hot electron lifetime. Such prolongation, in turn, can be associated with the suppression of electron-phonon interactions by the spatial confinement effect. Consequently, it should result in the decrease of prominent bands in Raman spectra which are originated by electron-phonon interactions, while the photoluminescence intensity may, on the contrary, rise. Particularly such deformations of the Raman spectra were observed in the present study.

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Research Progress of 2 - 5 μm Mid-Infrared GaSb Semiconductor Materials

余¹

2018

APP

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III-V group semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Among these materials, with characteristics that include high carrier mobility and a narrow band gap, gallium antimonide (GaSb) and GaSb-related semiconductors have been recognized as most suitable candidates for high-performance optoelectronics in the mid-infrared range. The performance of semiconductor devices, however, strongly dependent on the structure and optical properties of materials, so the GaSb materials research focus is to improve the quality of crystal, adjust the alloy composition, improve the luminous performance, etc. In this paper, the progress of epitaxial growth and material properties of 2 -5 μm GaSb and GaSb-related semiconductor materials are briefly reviewed. The epitaxial growth processes and material properties of GaSb, GaSb related alloy materials and GaSbbased quantum well materials are discussed in order to obtain the optimal conditions for epitaxial growth of GaSb-based semiconductor materials.

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Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: impact of nonradiative recombination

Cited by 3 publications

References 8 publications

Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

Study of nanocarbon thin-film field-electron emitters by Raman spectroscopy

Research Progress of 2 - 5 μm Mid-Infrared GaSb Semiconductor Materials

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