Research Progress of 2 - 5 μm Mid-Infrared GaSb Semiconductor Materials

Abstract

III-V group semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Among these materials, with characteristics that include high carrier mobility and a narrow band gap, gallium antimonide (GaSb) and GaSb-related semiconductors have been recognized as most suitable candidates for high-performance optoelectronics in the mid-infrared range. The performance of semiconductor devices, however, strongly dependent on the structure and optical properties of materials, so the GaSb materials research focus is to improve the quality of crystal, adjust the alloy composition, improve the luminous performance, etc. In this paper, the progress of epitaxial growth and material properties of 2 -5 μm GaSb and GaSb-related semiconductor materials are briefly reviewed. The epitaxial growth processes and material properties of GaSb, GaSb related alloy materials and GaSbbased quantum well materials are discussed in order to obtain the optimal conditions for epitaxial growth of GaSb-based semiconductor materials.

Effect of Hole Shift on Threshold Characteristics of GaSb-Based Double-Hole Photonic-Crystal Surface-Emitting Lasers

“…GaSb-based semiconductors are ideal candidates for mid-infrared (MIR) light emitters of 2-5 µm [4]. However, the lasing wavelengths of high performance lasers composed of type-I InGaAsSb/AlGaAsSb quantum-well (QW) heterostructures are not beyond 3 µm or, in particular, below 2.5 µm [5].…”

PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE

“…Bandgap energy is a crucial material parameter that is closely linked to the operating wavelength of optoelectronic devices. Gallium arsenide (GaAs) and GaSb both present a zinc blende structure; however, the bandgap of GaSb (0.822 eV at 0 K and 0.725 eV at 300 K) is smaller, giving it superior performance in the mid-infrared range [1].…”