Photoluminescence in implanted and doped silicon near room temperature

Matsubara, Ichiro; Sasahara, S.; Mishina, Tomobumi; Ishibashi, Y.; Kobayashi, Toshihiko; Nakahara, Jun

doi:10.1002/pssb.200541220

Cited by 5 publications

(6 citation statements)

References 6 publications

(13 reference statements)

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“…The influence of pressure up to around 3 GPa on the PL spectra of the material is also reported. The observed PL peak shifts to lower energy at a rate of -14 meV/GPa in agreement with the result of earlier optical absorption studies and thus shows the mechanism to be closely related to the indirect band gap of silicon [7][8][9].…”

Section: Resultssupporting

confidence: 89%

“…The proposed model for the increased EL efficiency of this material at room temperature is the introduction of dislocation loops which improves carrier confinement [3,4], although excitonic traps which store and supply electronhole pairs at elevated temperatures [5] and high bulk Shockley-Read-Hall lifetimes [6] have also been suggested. Photoluminescence (PL) spectra from boron-implanted silicon, p-type and n-type doped silicon are also studied by Matsubara et al [7]. Their results indicate that threshold energies of PL spectra are in good agreement with those of absorption spectra [8], and these PL spectra are assigned as intrinsic phonon-assisted indirect transitions.…”

Section: Introductionmentioning

confidence: 75%

“…These spectra are assigned as phonon-assisted indirect transitions [7]. With increasing temperature from 80 K to 300 K, the photon energy of PL peak shifts from 1.099 to 1.088 eV, following the decrease in the silicon indirect band gap with temperature when corrected for the transverse optical (TO) phonon energy [11].…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Excitation and pressure effects on photoluminescence from dislocation engineered silicon material

Ishibashi

Kobayashi²,

Prins

et al. 2006

Physica Status Solidi (b)

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We report the influence of excitation wavelength and pressure effects on the photoluminescence (PL) of silicon light-emitting diode material fabricated by boron ion implantation. The PL spectra show an anomalous increase in total intensity as temperature elevates, and this luminescence is found to be strongest with decreasing laser penetration depth away from the sample surface. The PL peak position shifts towards lower energy at a rate of -14 meV/GPa with increasing pressure. This rate agrees with earlier optical measurements on the band-edge absorption of silicon, confirming that this luminescence is closely related to phonon-assisted indirect band gap transitions.

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Section: Resultssupporting

confidence: 89%

Section: Introductionmentioning

confidence: 75%

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Excitation and pressure effects on photoluminescence from dislocation engineered silicon material

Ishibashi

Kobayashi²,

Prins

et al. 2006

Physica Status Solidi (b)

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“…The EL spectra are peaked at ~1120 nm (~1.11 eV). The peak can be assigned as phonon-assisted indirect transitions which correspond very closely in energy to the band gap of Si (1.12 eV) (10). The peak wavelength is not changed when the current increases.…”

Section: Resultsmentioning

confidence: 81%

(Invited) Electroluminescence in Metal-Oxide-Semiconductor Tunnel Diodes with Nanometer-Thick Silicon

Morita¹,

Tsuchida²,

Matsumura³

et al. 2012

ECS Trans.

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Electroluminescence in metal-oxide-semiconductor tunnel diodes with a transparent conductive oxide gate and a nanometer-thick silicon layer on silicon-on-insulator substrates has been studied. The electroluminescence spectra from the diodes are peaked at ~1120 nm (~1.11 eV). The peak shifts toward lower energy as the negative gate voltage value increases. The peak shift can be explained by a Stark effect. The peak tail intensity at the short-wavelength side of the peak at ~1120 nm increases as the silicon layer thickness decreases. This may indicate that the increase in the intensity is due to transitions between subbands near the silicon band edges. Small peaks have been observed at ~1050 nm (~1.18 eV) and ~1010 nm (~1.23 eV). The peak wavelengths are independent of the silicon layer thickness. This exhibits that the electroluminescence is due to defect-mediated transitions.

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“…The spectrum from the diode on an SOI wafer is peaked at 1145 nm and at 1050 nm (1.18 eV). The peak at 1145 nm has been assigned as phonon-assisted indirect transitions (7). Figure 6 (b) shows the EL spectrum obtained by subtracting the Si spectrum from the SOI.…”

Section: Resultsmentioning

confidence: 99%

Electroluminescence in Metal-Oxide-Semiconductor Tunneling Diodes with Ultra Thin Silicon

Matsumura¹,

Yamada²,

Arima³

et al. 2009

ECS Trans.

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Electroluminescence characteristics of a metal-oxide-semiconductor tunneling diode on a silicon-on-insulator wafer have been studied. The spectrum from the diode is peaked at 1050 nm (1.18 eV) and at 1145 nm (1.08 eV). The spectrum from the diode on a silicon wafer is peaked at 1145 nm. The peak at 1145 nm can be assigned as phonon-assisted indirect transitions. It is indicated that the peak at 1050 nm is due to the quantum confinement in an ultra thin silicon layer.

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Photoluminescence in implanted and doped silicon near room temperature

Cited by 5 publications

References 6 publications

Excitation and pressure effects on photoluminescence from dislocation engineered silicon material

Excitation and pressure effects on photoluminescence from dislocation engineered silicon material

(Invited) Electroluminescence in Metal-Oxide-Semiconductor Tunnel Diodes with Nanometer-Thick Silicon

Electroluminescence in Metal-Oxide-Semiconductor Tunneling Diodes with Ultra Thin Silicon

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