Excitation and pressure effects on photoluminescence from dislocation engineered silicon material

Ishibashi, Y.; Kobayashi, Toshihiko; Prins, A. D.; Nakahara, Jun; Lourenço, M. A.; Gwilliam, R.; Homewood, K. P.

doi:10.1002/pssb.200672525

Cited by 8 publications

(8 citation statements)

References 12 publications

(22 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With changing bandgap energy also the peak of the band‐to‐band (BB) luminescence is shifted. This effect was shown to be in good agreement with theoretical values at 4.2 K for uniaxial stress 8 and at room temperature for hydrostatic stress 9 in monocrystalline silicon wafers.…”

Section: Introductionmentioning

confidence: 59%

Simultaneous stress and defect luminescence study on silicon

Gundel

Schubert

Warta

2010

Physica Status Solidi (a)

View full text Add to dashboard Cite

Internal stress is strongly correlated with the mechanical stability of silicon wafers and with the distribution of defects and thus the minority carrier lifetime, which is often the limiting parameter for multicrystalline (me) silicon solar cells. Therefore, internal stress is a highly relevant parameter for me silicon. In this paper, a qualitative internal stress measurement technique by photoluminescence spectroscopy for me silicon is presented. This technique is based on the stress-induced-bandgap energy shift. Stress measurements are compared to defect luminescence images, which are gathered in the same measurement. The method is evaluated by stress measurements with micro-Raman spectroscopy

show abstract

Section: Introductionmentioning

confidence: 59%

Simultaneous stress and defect luminescence study on silicon

Gundel

Schubert

Warta

2010

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…This can explain the experimental evidences as to observation of the phonon assisted transitions. 35 The result as to reduction of the barrier height to transfer CB electrons from L/X points into Γ with increasing the strain is also important. It indicates that upon increasing the temperature number of free carriers transferring from L/X points into Γ increases thus increasing the intensity of radiative direct optical transition.…”

Section: Discussionmentioning

confidence: 99%

Strain-induced modulation of band structure of silicon

Karazhanov

Davletova²,

Ulyashin

2008

Journal of Applied Physics

View full text Add to dashboard Cite

This work presents ab initio study of strain-induced modulation of band structure of Si.It is shown that at straining pressures >12 GPa band structure of Si can be turned from indirect to direct. Both the bottommost conduction band and topmost valence band are located at the Γ point. The conduction band minimum at the Γ point of the strained Si is found to be much more dispersive than that at the X point of the unstressed Si.Consequently, electrical conductivity through the Γ valley is suggested to be more superior than the X point of the unstressed Si. Barrier height, which is needed to transfer electrons in the Γ point to X/L points or from X/L to Γ point have been calculated. The results have been applied to explain peculiarities of electronic structure and light emission of Si based materials containing dislocations and voids.

show abstract

“…[22] For hPFO, the SWNT dispersion used most throughout this report, we assigned the most prominent PL peaks to the semiconducting (7,5), (7,6), (8,6), and (8,7) chiral indices (see Figure S13 for full assignment of hPFO). The (8,7) SWNT (marked in the inset of Figure S14) and other bands were observed in the radial breathing mode (RBM) range (200-280 cm À1 , l ex = 785 nm) of the Raman spectrum ( Figure S14).…”

Section: Methodsmentioning

confidence: 99%