Photoluminescence from electron-hole plasmas confined in Si/Si1−<i>x</i>Ge<i>x</i>/Si quantum wells

Xiao, X.; C, Liu; Sturm, James C.; Lenchyshyn, L. C.; Thewalt, M. L. W.

doi:10.1063/1.107196

Cited by 61 publications

(22 citation statements)

References 9 publications

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“…The spectral shape of radiative recombination of electrons and holes in their degenerate systems is given by convolution of the occupied electron and hole densities of state: 11,12,15 I͑h…”

Section: Electron-hole Condensation In Simentioning

confidence: 99%

Luminescence due to electron-hole condensation in silicon-on-insulator

Tajima

Ibuka

1998

Journal of Applied Physics

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Articles you may be interested inTunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors Appl.We show that photoluminescence from a thin silicon-on-insulator ͑SOI͒ layer with a thickness of about 0.1 m excited by ultraviolet ͑UV͒ light originates from the recombination of electrons and holes in their condensed phase. The UV excitation increases the density of electrons and holes in the SOI layer, since the UV light is predominantly absorbed in that layer and the excited carriers cannot diffuse into the base wafer because of the presence of a buried oxide layer which acts as a diffusion barrier. As a result, a characteristic ''condensate luminescence'' is emitted from the SOI layer. The spectral shape of the condensate luminescence agrees with the calculated shape using convolution of the occupied electron and hole densities of states. A systematic spectral change induced by the variation of excitation intensity and the sample temperature is consistently explained by the phase diagram of the electron-hole system in Si which consists of free exciton ͑FE͒, electron-hole plasma ͑EHP͒, and electron-hole liquid ͑EHL͒. The phase transition from FE to EHP or that from FE to EHL is observed with increasing excitation intensity, according to whether the temperature is higher or lower than the critical temperature of EHL. These results confirm for us that the condensate luminescence in the SOI layer is due to the recombination of electrons and holes in their condensed phase.

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Section: Electron-hole Condensation In Simentioning

confidence: 99%

Luminescence due to electron-hole condensation in silicon-on-insulator

Tajima

Ibuka

1998

Journal of Applied Physics

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“…One can use the model presented in [14] for description of the recombination processes in the semiconductor. The model is based on the calculation of the occupation of the states available in the conduction and the valence bands at certain concentration of minority carriers and certain electric field in the semiconductor.…”

Section: Figurementioning

confidence: 99%

“…That field confines the carriers and keeps them close to the recombination active centres. The authors showed that the emission line shape of the MISLED can be fitted by the electron-hole-plasma recombination model [14]. Additionally, there has been indication of radiative recombination between the electrons and holes via the interface states.…”

Section: Introductionmentioning

confidence: 97%

Silicon based light emitter utilizing tunnel injection of excess carriers via MIS structure

Arguirov¹,

Wenger²,

Lukosius³

et al. 2011

Phys. Status Solidi (c)

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We report on electro‐luminescence from metal‐insulator‐semiconductor diodes (MISLED). MISLEDs prepared on silicon with HfO2 layers of different thicknesses were investigated and their properties compared with such prepared by using SiO2 insulator layer. The role of the insulator layer was studied in view of the efficiency of the band‐to‐band radiation from silicon. We show that the luminescence efficiency depends on the dielectric constant of the insulator as well as on its ability to conduct carriers by tunnelling. Efficiency enhancement of 3.3 times was detected when the SiO2 insulator was substituted by HfO2 in the MIS emitter. Optimal injection current exists, which leads to a maximal efficiency of the luminescence. The optimal current depends strongly on the thickness of the oxide. We relate the existence of an optimal current with the depth at which the injected minority carriers recombine radiatively. Thus the electric field in the semiconductor and the surface recombination are the factors determining the optimal injection (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…To extract The details of this model is given in Ref. 8. The fitted spectra are shown in Fig.5(b) as well as the contribution from the NP line only.…”

Section: Photoluminescencementioning

confidence: 99%

Growth and Photoluminescence of Strained < 110 > Si/SilxGex/Si Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition

Liu

Sturm²,

Lacroix

et al. 1994

MRS Proc.

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We report the first chemical vapor deposition growth and systematic photoluminescence study of strained Sil_:Ge. alloy layers on < 110 > Si substrates. Compared to < 100 > Si substrates, the same growth conditions yielded a slightly lower Ge composition, but a much lower growth rate. For thick layers, the relaxation along [110] direction is insufficient and lead to predominantly uniaxial strain in the the films. From the photoluminescence, the bandgap of strained SilX. 1 Gex on < 110 > Si for 0.16 < x < 0.43 is determined and compared to theory. A strong "no-phonon" emission process in photoluminescence spectra of strained < 110 > Si/Sil-.Ge•/Si was observed as compared with that observed in < 100 > layers. Finally, quantum confinement shift of Si/Si0. 7 1Geo. 29 /Si wells with a confinement energy up to 110 meV has been observed by varying the well width from 133 A to 17 A.

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Photoluminescence from electron-hole plasmas confined in Si/Si1−xGex/Si quantum wells

Cited by 61 publications

References 9 publications

Luminescence due to electron-hole condensation in silicon-on-insulator

Luminescence due to electron-hole condensation in silicon-on-insulator

Silicon based light emitter utilizing tunnel injection of excess carriers via MIS structure

Growth and Photoluminescence of Strained < 110 > Si/SilxGex/Si Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition

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