Photoluminescence characterization of pure and Sm3+-doped thin metaloxide films

Sensitizing of Sm3+ fluorescence by silver dopant in the TiO2 films

“…Thus emitting properties of Sm 3+ ions confined in the TiO 2 :Ag host matrix are investigated in this paper. In contrast to the previous papers [9][10][11][12] dealing with Sm 3+ fluorescence in neat and doped oxide matrices, the present investigation revealed considerable (up to 20 times) enhancement of Sm 3+ fluorescence near the silver dopant under direct excitation. The possible roots of this enhancement are discussed.…”

“…Energies of some electronic transitions in silver ions may come to resonance with Sm 3+ − transitions. For example, bands 4d 10 →4d 9 5s 1 of separated Ag + ions and 4d 10 5s→4d 10 5p of (Ag 2 ) + pairs lie near the wavelength 450 nm [12] which is close to transition 6 H 5/2 → 4 I 15/2 of Sm 3+ ion [9]. Thus non-radiative energy transfer from silver ions to Sm 3+ centers could increase excitation efficiency of fluorophore.…”

“…Therefore indirect excitation of Sm 3+ ions is also used. It means that exciting light (in our case λ exc = 355 nm) is absorbed firstly by the TiO 2 host matrix and then the excitation energy is non-radiatively transferred to the rare earth ions [9,10]. Fluorescence spectrum of Sm 3+ ions excited through the TiO 2 :Ag matrix (λ exc = 355 nm) have several groups of narrow lines (Fig.…”

“…Doping of these films with luminescent markers that emit in the visible range can be considered as a way to implement novel photonic materials. Previous investigations demonstrated that fairly efficient host-sensitized luminescence from Sm 3+ ions in TiO 2 matrix can be obtained [9][10][11]. Moreover, rare earth fluorescence can serve as identification of a crystalline phase of a surrounding TiO 2 matrix [11].…”

Luminescence of hafnium dioxide films produced from hafnium dipivaloylmethanate

“…For example, the scatter of the band gap width is in the interval from 6.15 [1] to 4.2 eV [2] and considerably depends on the techniques for production and synthesis and annealing modes. We are aware of a number of papers [1, 3,5], where the luminescence of HfO 2 /Si films produced by Atomic Layer Deposition technique (ALD) is studied. The luminescence spectra were obtained with a pulsed ArF excimer laser (λ rad ≅ 193 nm).…”