Both intrinsic and extrinsic defects of hafnium oxide films are investigated based on photoluminescence ͑PL͒ and cathodoluminescence ͑CL͒ measurements. Instead of using the high-power synchrotron radiation or ArF excimer laser sources, a hydrogen-deuterium lamp ͑HDL͒ was used for the PL measurements to avoid the possible generation of active oxygen and hydroxyl ions. Results show that the HDL PL spectra generally agree with those registered using the conventional high-power excitation sources. CL spectra also agree with the PL ones. Narrow emission band at peak energy of 4.0 eV, which is ascribed to the vibronic transition of excited OH ·* radical, was found using photoluminescence excitation and at energy of 4.25 eV.
A quantitative method for treating chemical deposition and etching open tube processes is described. The method is based on the gas dynamic theory of boundary layer and on the similarity of mass‐ and heat‐transfer phenomena. For the conditions
normalLe=normalSc=normalPr=1
, the equation for the rate of the process is Rt=ρeuenormalbSt This equation is applied for the calculation of the rate of Ge and Si crystals deposition and etching. A good agreement of calculated and experimental values is obtained.
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