Photoluminescence and X-ray diffraction study of highly uniform silicon and GexSi1−x epitaxial layers

Greve, D. W.; Misra, R.; Schlesinger, T. E.; McLaughlin, G.; Capano, Michael A.

doi:10.1016/0040-6090(92)90036-b

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Growth Of Quantum Well Structures1

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1995

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Cited by 7 publications

(1 citation statement)

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“…The observation of satellite peaks in these and previous [7] X-ray diffraction measurements verify the presence of periodic changes in germanium fraction. In order to show that similar modulation of the boron concentration is obtained, we performed SIMS measurements on sample L2.…”

Section: Growth Of Quantum Well Structuressupporting

confidence: 60%

Characterization of Doped Ge_xSi_1−x Multiple Quantum well Structures for far- IR Detectors

et al. 1994

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Doped GexSilx/ Si multiple quantum well structures have been grown by UHV/ CVD and characterized by various techniques. SIMS and X-ray confirm the intended modulation of germanium and boron concentrations, and photoluminescence has been used to assess material quality. Strong free-carrier absorption has been observed at normal incidence in some samples. The results suggest that doping intermediate between 4 x 1018 cm" 3 and 4 x 1019 cm-3 is necessary for useful detectors.

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Section: Growth Of Quantum Well Structuressupporting

confidence: 60%

Characterization of Doped Ge_xSi_1−x Multiple Quantum well Structures for far- IR Detectors

et al. 1994

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Low temperature heteroepitaxial growth of Si1−xGexon-Si by photo-enhanced ultra high vacuum chemical vapor deposition using Si2H6 and Ge2H6

John

Banerjee

1995

J. Electron. Mater.

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Photoluminescence characterization of UHV/CVD grown multi-quantum well structures

Misra

Greve

Schlesinger

1993

JEM

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Photoluminescence and X-ray diffraction study of highly uniform silicon and GexSi1−x epitaxial layers

Cited by 7 publications

References 13 publications

Characterization of Doped Ge_xSi_1−x Multiple Quantum well Structures for far- IR Detectors

Characterization of Doped Ge_xSi_1−x Multiple Quantum well Structures for far- IR Detectors

Low temperature heteroepitaxial growth of Si1−xGexon-Si by photo-enhanced ultra high vacuum chemical vapor deposition using Si2H6 and Ge2H6

Photoluminescence characterization of UHV/CVD grown multi-quantum well structures

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Photoluminescence and X-ray diffraction study of highly uniform silicon and GexSi1−x epitaxial layers

Cited by 7 publications

References 13 publications

Characterization of Doped GexSi1−x Multiple Quantum well Structures for far- IR Detectors

Characterization of Doped GexSi1−x Multiple Quantum well Structures for far- IR Detectors

Low temperature heteroepitaxial growth of Si1−xGexon-Si by photo-enhanced ultra high vacuum chemical vapor deposition using Si2H6 and Ge2H6

Photoluminescence characterization of UHV/CVD grown multi-quantum well structures

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Product

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About

Characterization of Doped Ge_xSi_1−x Multiple Quantum well Structures for far- IR Detectors

Characterization of Doped Ge_xSi_1−x Multiple Quantum well Structures for far- IR Detectors