Photoluminescence and photoluminescence excitation studies in 80MeV Ni ion irradiated MOCVD grown GaN

Direct comparison on the structural and optical properties of metal-catalytic and self-catalytic assisted gallium nitride (GaN) nanowires by chemical vapor deposition

“…Hence, the suppression of the YL band in Ni-GaN NWs can be attributed to the compensation of deep-level defects such as Ga vacancies. 46 However, deep investigations are warranted to conrm the presence of Ni in the lattice of GaN. Using the Varshni formula 47 and band-tail model, the temperaturedependent emission energy can be tted by.…”

Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation

“…34) Annealed Niimplanted GaN showed a DLPL covering a broad wavelength ranging from green to infrared light. 35) Further, the densities of Mn, Fe, and Ni obtained by SIMS for a sample grown by another lot were below the detection limits of 2 × 10 14 cm −3 , 7 × 10 14 cm −3 , 2 × 10 15 cm −3 , respectively. These elements are not thought to be the origin of the RL, which, thus, still remains unclear.…”

Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions

“…The experimental results showed the formation of discontinuous latent trails with a diameter of about 0.1 nm throughout the 1.5 µm thickness of the sample, and a highly disordered lattice structure in the trail region, but no amorphous phases were formed. Devaraju et al investigated the changes in photoluminescence spectra of GaN materials induced by irradiation with 80 MeV Ni ions [7]. Stronger peaks at 450 nm were observed, attributed to defect-induced blue luminescence bands, and after annealing, the reduction of defects led to a significant decrease in the yellow luminescence intensity.…”