Direct comparison on the structural and optical properties of metal-catalytic and self-catalytic assisted gallium nitride (GaN) nanowires by chemical vapor deposition

Purushothaman, V.; Venkatesh, P.; Navamathavan, R.; Jeganathan, K.

doi:10.1039/c4ra05388e

Cited by 9 publications

(9 citation statements)

References 45 publications

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“…[1][2][3][4] Many techniques have been developed to prepare nanostructured materials, such as dealloying, 5 mechanical exfoliation, 6 chemical vapor deposition (CVD) 7 and physical vapor deposition (PVD), 8 sol-gel method, 9,10 electric-arc and arc-discharge methods, [11][12][13] aqueous solution method, 14 selective etching, 15,16 vapor-liquid-solid (VLS) method, 17 nanoimprinting 18,19 and so on. [1][2][3][4] Many techniques have been developed to prepare nanostructured materials, such as dealloying, 5 mechanical exfoliation, 6 chemical vapor deposition (CVD) 7 and physical vapor deposition (PVD), 8 sol-gel method, 9,10 electric-arc and arc-discharge methods, [11][12][13] aqueous solution method, 14 selective etching, 15,16 vapor-liquid-solid (VLS) method, 17 nanoimprinting 18,19 and so on.…”

Section: Introductionmentioning

confidence: 99%

Novel Cu–Ag bimetallic porous nanomembrane prepared from a multi-component metallic glass

Liu

Chen

et al. 2015

RSC Adv.

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Porous nanomembranes (PNMs) have wide applications in templates, filtration, transport and separation, water treatment, drug delivery and sensing, but the preparation of metallic PNMs has been scarcely reported due to the technical difficulty and the easy oxidization during the preparation and preservation processes. In present work, ultrathin Cu-Ag bimetallic PNMs with thicknesses of $5 to 50 nm, an area larger than 20 square micron, pore diameters of $10 to 20 nm and ligament feature sizes of $30 to 50 nm have been prepared from a Zr 48 Cu 36 Ag 8 Al 8 metallic glass by chemical dealloying assisted with ultrasonic vibration. The structural evolution and formation mechanism of the Cu-Ag bimetallic PNMs were also investigated. The effects of dealloying parameters on the dealloyed samples' morphologies were systematically investigated. The prepared Cu-Ag bimetallic PNMs exhibit good antibacterial activity against E. coli over a wide concentration range. The present result provides an easy and inexpensive method for preparing Cu-Ag PNMs. † Electronic supplementary information (ESI) available: Optical image of the dealloyed sample, SEM images of the dealloyed sample, EDS result of the dealloyed sample and TEM bright eld image of the Cu-Ag bimetallic PNM. See

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Section: Introductionmentioning

confidence: 99%

Novel Cu–Ag bimetallic porous nanomembrane prepared from a multi-component metallic glass

Liu

Chen

et al. 2015

RSC Adv.

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“…The LMBE growth of GaN layers was monitored by in situ RHEED and the typical RHEED pattern obtained for the GaN template and the LMBE grown GaN sample along [11][12][13][14][15][16][17][18][19][20] and directions have been presented in Fig. 1(a and b).…”

Section: Structural Properties Of Lmbe Grown Homoepitaxial Gan Nanostmentioning

confidence: 99%

“…have been grown on a variety of substrates using different growth techniques for various applications. [10][11][12][13][14][15][16][17] In spite of the promising physical and electrical properties of the GaN nanowires, nanorods and nanotubes, it is quite complicated to separate them individually in selfassembly for specic applications. On the other hand, nanowalls are drawing special attention due to continuity in the lateral direction and porous surfaces for fruitful applications in the eld of nitride based sensor technology and nanodevices.…”

Section: Introductionmentioning

confidence: 99%

Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

et al. 2015

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aWe have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a constant r.f. nitrogen plasma ambient. The effect of laser repetition rate in the range of 10 to 30 Hz on the structural properties of the GaN nanostructures has been studied using high resolution X-ray diffraction, field emission scanning electron microscopy and Raman spectroscopy. The variation of the laser repetition rate affected the tip width and pore size of the nanowall networks. The z-profile Raman spectroscopy measurements revealed the GaN nanowall network retained the same strain present in the GaN template. The optical properties of these GaN nanowall networks have been studied using photoluminescence and ultrafast spectroscopy and an enhancement of optical band gap has been observed for the nanowalls having a tip width of 10-15 nm due to the quantum carrier confinement effect at the wall edges. The electronic structure of the GaN nanowall networks has been studied using X-ray photoemission spectroscopy and it has been compared to the GaN template. The calculated Ga/N ratio is largest ($2) for the GaN nanowall network grown at 30 Hz. Surface band bending decreases for the nanowall network with the lowest tip width. The homoepitaxial growth of porous GaN nanowall networks holds promise for the design of nitride based sensor devices.

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“…It is important to mention that the GaN NWs grown using Au or Ni as a catalyst show superior quality as compared to self-catalyzed NWs. 28 They claimed that the optical performance was also degraded because of the defects originated from the metal catalyst incorporation into epitaxial NWs. To suppress the possible contamination of the metal catalyst in the active region of optical devices, we switched to the VS mode for the radial growth of InGaN/GaN multiple quantum well (MQW) shells, as shown in the schematic in Figure 1 c. First, the GaN shell is grown around the GaN core NW, which acts as a host for the growth of InGaN/GaN MQW shells.…”

Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate

et al. 2020

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Beryllium oxide (BeO) belongs to a very unique material family that exhibits the divergent properties of high thermal conductivity and high electrical resistivity. BeO has the same crystal structure as GaN, and the absolute difference in the lattice constants is less than 17%. Here, the growth of GaN nanowires (NWs) on the polycrystalline BeO substrate is reported for the first time. The NWs are grown by a vapor–liquid–solid approach using a showerhead-based metal–organic chemical vapor deposition. The growth direction of NWs is along the m -axis on all planes of the substrate, and it is confirmed by transmission electron microscopy (TEM) and selected area electron diffraction (SAED) patterns. The vertical and tilted growth of NWs is due to the different planes of the substrate such as the m -plane, a -plane, and semipolar planes and is confirmed by X-ray diffraction. Subsequently, the GaN shell and InGaN/GaN multiple quantum wells (MQWs) are coaxially grown using a vapor–solid approach in the same reactor. A very high crystal quality is verified by TEM and SAED and is also confirmed by measuring the photoluminescence. The optical emission is tuned for the entire visible spectrum by increasing the indium incorporation in InGaN quantum wells. The conformal growth of InGaN/GaN MQW shells and the defect-free nature of the structure are confirmed from spatially resolved cathodoluminescence. This study will provide a platform for researchers to grow GaN NWs on the BeO substrate for a range of optical and electrical applications.

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Direct comparison on the structural and optical properties of metal-catalytic and self-catalytic assisted gallium nitride (GaN) nanowires by chemical vapor deposition

Abstract: The structural and optical properties of GaN nanowires (NWs) grown by catalytic and self-catalytic-assisted vapor liquid solid approach using chemical vapor deposition (CVD) are reported.

Cited by 9 publications

References 45 publications

Novel Cu–Ag bimetallic porous nanomembrane prepared from a multi-component metallic glass

Novel Cu–Ag bimetallic porous nanomembrane prepared from a multi-component metallic glass

Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate

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