Photoluminescence and free-electron absorption in heavily phosphorus-doped Si nanocrystals

Mimura, Atsushi; Fujii, Minoru; Hayashi, Shinji; Kovalev, D.; Koch, F.

doi:10.1103/physrevb.62.12625

Cited by 174 publications

(158 citation statements)

References 17 publications

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“…7 On the other hand, any clear explanations have been given for the former enhancement, although it has been reported that the decrease in the number of interface defects may be produced by light P doping. 7 Since SiNCs embedded in SiO 2 have very large interface-to-bulk ratio, the large difference between the Si-Si atom bonding distance in the Si crystal cores and that of the surrounding SiO 2 induces high density of interface defects. Thus, we have to investigate P doping effects for SiNCs embedded in SiO 2 in which the interface defects are enough passivated.…”

Section: Introductionmentioning

confidence: 99%

“…This decrease is due to the Auger recombination process among excited electrons-holes, and the conduction electrons originated from donors doped in each SiNC, inducing nonradiative recombination. 7 We have investigated the similar P concentration dependence and hydrogen passivation effects for SiNCs/ SiO 2 systems ͑samples 2, 4, 6, 8, 10, and 12͒ obtained by 1200°C annealing as well. This higher annealing temperature produces SiNCs with larger averaged diameters ͑5-6 nm͒ in SiO 2 ͑see Fig.…”

Section: -3mentioning

confidence: 99%

“…Fujii and co-workers 3,7 reported P doping effects for PL intensity that light doping produces enhancement of PL for SiNCs with relatively small sizes, but not for those for larger SiNCs, and heavy P doping leads to decrease in PL intensity. The latter is due to Auger nonradiative recombination.…”

Section: Introductionmentioning

confidence: 99%

“…3,7 For investigation of ion implantation effects in silicon ͑Si͒ nanostructures, we have measured PL and electron spin resonance ͑ESR͒ of un-doped SiNCs and P doped SiNCs embedded in SiO 2 before and after hydrogen passivation. We call hereafter these systems SiNCs/ SiO 2 , for simplicity.…”

Section: Introductionmentioning

confidence: 99%

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Phosphorus ion implantation in silicon nanocrystals embedded in SiO2

Murakami

Shirakawa

Tsujimura

et al. 2009

Journal of Applied Physics

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We have investigated phosphorus ion ͑P + ͒ implantation in Si nanocrystals ͑SiNCs͒ embedded in SiO 2 , in order to clarify the P donor doping effects for photoluminescence ͑PL͒ of SiNCs in wide P concentrations ranging in three orders. Some types of defects such as P b centers were found to remain significantly at the interfaces between SiNCs and the surrounding SiO 2 even by high-temperature ͑1000°C͒ annealing of all the samples. Hydrogen atom treatment ͑HAT͒ method can efficiently passivate remaining interface defects, leading to significant increase in the intensity of PL arising from the recombination of electron-hole pairs confined in SiNCs, in addition to significant decrease in interface defects with dangling bonds detected by electron spin resonance. From both the results of the P dose dependence before and after HAT, it is found that the amount of remaining defects is higher for samples with SiNCs damaged by implantation with relatively lower P + doses and then annealed, and that through HAT the observed PL intensity increases surely as the P concentration increases up to a critical concentration. Then it begins to decrease due to Auger nonradiative recombination above the critical concentration which depends on the size of SiNCs. These results suggest an effect of relatively low concentration of P atoms for the enhancement of PL intensity of SiNCs and we present an unconventional idea for explaining it.

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Section: Introductionmentioning

confidence: 99%

Section: -3mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Phosphorus ion implantation in silicon nanocrystals embedded in SiO2

Murakami

Shirakawa

Tsujimura

et al. 2009

Journal of Applied Physics

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“…This qualitative picture of charge transfer between semiconductor host and shallow dopant is well established for bulk semiconductor materials and is fundamental to our understanding of the properties of semiconductor devices. Recent experimental and theoretical work [3,4,5,6,7,8,9,10] has shown that it also holds for a variety of doped semiconductor nanoparticles.…”

mentioning

confidence: 99%

Reversal of the Charge Transfer between Host and Dopant Atoms in Semiconductor Nanocrystals

Blomquist

Kirczenow

2004

Nano Lett.

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We present ab initio density functional calculations that show P (Al) dopant atoms in small hydrogen-terminated Si crystals to be negatively (positively) charged. These signs of the dopant charges are reversed relative to the same dopants in bulk Si. We predict this novel reversal of the dopant charge (and electronic character of the doping) to occur at crystal sizes of order 100 Si atoms. We explain it as a result of competition between fundamental principles governing charge transfer in bulk semiconductors and molecules and predict it to occur in nanocrystals of most semiconductors.

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