Photoelectronic properties of the GaAs:Si epitaxial layers on the GaAs substrate

Czekała-Mukalled, Z; Kuźmiński, S.; Mao, XL; Lā,

doi:10.1016/0042-207x(94)00113-8

Cited by 3 publications

(3 citation statements)

References 3 publications

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“…Therefore (with some caveats in 'pathological' cases 2 ), transitions appearing in both types of spectra usually are attributed to bulk transitions, whereas transitions appearing in the SPV spectra alone are assigned to surface states. 3,71 Another example is that independent surface recombination velocity measurements by trPL often are very useful in assessing the relative importance of the surface recombination velocity and the equilibrium surface bandbending in determining the magnitude of the SPV signal. 46,47 As a non-trivial example of the power inherent in a combination of several optoelectronic spectroscopies, we consider the comprehensive characterization of defects in thin GaN films by photoluminescence, SPV, photoconductivity and internal photoemission spectra, all four of which are shown in Fig.…”

Section: Correlation With Other Methodsmentioning

confidence: 99%

Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering

Kronik

Shapira

2001

Surface & Interface Analysis

405

267

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The possibility of obtaining a detailed picture of the electronic structure makes surface photovoltage spectroscopy (SPS) eminently suitable for bridging the gap between the chemical, physical, optical and electrical properties of semiconductors. In SPS, changes in band bending (both at the free semiconductor surface and at buried interfaces) are monitored as a function of external illumination. Surface photovoltage spectroscopy can provide detailed, quantitative information on bulk properties (e.g. bandgap and type, carrier diffusion length and lifetime) and can be used for complete construction of surface and interface band diagrams, including the measurement of energy levels in quantum structures. A particular strength is that a comprehensive analysis of surface and bulk defect state distributions and properties is made possible. Measurements using SPS are contactless and non-destructive. In addition, they can be performed both in situ and ex situ, at any reasonable temperature, on any semiconducting material, at any ambient and at any lateral resolution down to the atomic scale. This review starts with an overview of SPS-related surface and interface theory, describes the SPS experimental set-up and presents applications for surface and interface characterization of a wide variety of materials and structures, cross-correlating them with other methodologies.

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Section: Correlation With Other Methodsmentioning

confidence: 99%

Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering

Kronik

Shapira

2001

Surface & Interface Analysis

405

267

View full text Add to dashboard Cite

show abstract

“…A more comprehensive example, measured at Si-doped GaAs epitaxial thin ®lms, where three bulk states (`E 1 '±`E 3 ') and two surface states (`E t4 ',`E t5 ') are found, is shown in Fig. 56 [337]. The`l series' and`n series' phonons in Fig.…”

Section: Gap State Spectroscopymentioning

confidence: 99%

“…56. (a) SPV and (b) photoconductivity spectra of Si-doped GaAs epitaxial thin ®lms.`E 1 '±`E 3 ' ± bulk state transitions, E t4 ',`E t5 ' ± surface state transitions (after Czekala-Mukalled et al [337]). …”

Section: Gap State Spectroscopymentioning

confidence: 99%