Photoelectron spectroscopy studies of SiO2/Si interfaces

Hirose, Kazuyuki; Nohira, Hiroshi; Azuma, Kazufumi; Hattori, Takeo

doi:10.1016/j.progsurf.2006.10.001

Cited by 104 publications

(68 citation statements)

References 93 publications

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“…Thus, there must be a compositional and structural transition region at the interface bridging these differences. Many studies throughout the last decades have aimed to reveal the properties of these transition layers [10][11][12]. From early studies on the quantitative analysis of the interface transition layer it was concluded, that the SiO 2 /Si interface cannot be abrupt but rather possesses a graded transition layer made of Si atoms in intermediate oxidation states, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…More recent, it was shown that the compositional transition might occur only over one monolayer [13], hence the interface must be considered as abrupt [12,14]. Contrary, the structural transition was found to take place gradually over a wider region up to 1 nm [12] and is made up of strained bonds and dangling bonds [15]. As a consequence, electronic defect states are generated which are energetically located in the bandgap of silicon and thereby causing charge carrier recombination.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities

Stegemann

Gad

Balamou

et al. 2017

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities

Stegemann

Gad

Balamou

et al. 2017

Applied Surface Science

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“…In conventional data gathering mode the sample is grounded, and the position as well as the intensity of the peaks are recorded in a static fashion [20]. Although several reports have appeared in the literature related to dynamical XPS measurements in the two extreme ends, very fast (nanoseconds to attoseconds) [21][22][23][24], and very slow (minutes to hours) [25][26][27] through various publications, the basic principles and techniques for implementing such measurements employing very simple modification to conventional instruments [28][29][30][31][32][33][34][35][36][37][38][39].…”

Section: Introductionmentioning

confidence: 99%

XPS for probing the dynamics of surface voltage and photovoltage in GaN

Sezen¹,

Özbay²,

Süzer³

2014

Applied Surface Science

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a b s t r a c tWe describe application of two different data gathering techniques of XPS for probing the dynamics of surface voltage and surface photovoltage (SPV) developed in microseconds to seconds time-domain, in addition to the conventional steady-state measurements. For the longer (seconds to milliseconds) regime, capturing the data in the snapshot fashion is used, but for the faster one (down to microseconds), square wave (SQW) electrical pulses at different frequencies are utilized to induce and probe the dynamics of various processes causing the surface voltage, including the SPV, via the changes in the peak positions. The frequency range covers anywhere from 10 −3 to 10 5 Hz for probing changes due to charging (slow), dipolar (intermediate), and electronic (fast) processes associated with the external stresses imposed. We demonstrate its power by application to n-and p-GaN, and discuss the chemical/physical information derived thereof. In addition, the method allows us to decompose and identify the peaks with respect to their charging nature for a composite sample containing both n-and p-GaN moieties.

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“…The Si2p binding energy for a heavily n-doped Si is 99.7 eV, and the corresponding one for Si 4+ is 103.4 eV when it is in a truly uncharged zero point charge (ZPC) state which increases when the layer is positively charged (holetraps created), and decreases when negatively charged (electron traps created). [7,12,13] In Fig. 2, we redisplay the Si2p region after correcting for the trivial bias shift, where we see that both, in the grounded case and under negative bias, the oxide layer is positively charged, which indicates that the flood-gun is not 100% effective.…”

Section: Resultsmentioning

confidence: 99%

Analysis of Fe nanoparticles using XPS measurements under d.c. or pulsed‐voltage bias

Süzer

Baer

Engelhard

2010

Surface & Interface Analysis

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The impact of solution exposure on the charging properties of oxide coatings on Fe metal-core oxide-shell nanoparticles has been examined by sample biasing during XPS measurements. The Fe nanoparticles were suspended in relatively unreactive acetone and analyzed after particles containing solutions were deposited on SiO2/Si or Au substrates. The particle and substrate combinations were subjected to ±10V d.c. or ±5V a.c., biasing in the form of square wave (SQW) pulses. The samples experienced variable degrees of charging for which low-energy electrons at ∼1eV, 20 μA and low-energy Ar+ ions were used to minimize it. Application of d.c. bias and/or SQW pulses significantly influences the extent of charging, which is utilized to gather additional analytical information about the sample under investigation. This approach allows separation of otherwise overlapping peaks. Accordingly, the O1s peaks of the silicon oxide substrate, the iron oxide nanoparticles, and that of the casting solvent can be separated from each other. Similarly, the C1s peak belonging to the solvent can be separated from that of the adventitious carbon. The charging shifts of the iron nanoparticles are strongly influenced by the solvent to which the particles were exposed. Hence, acetone exhibited the largest shift, water the smallest, and methanol in between. Dynamical measurements performed by application of the voltage stress in the form of SQW pulses provides information about the time constants of the processes involved, which leads us to postulate that these charging properties we probe in these systems stem mainly from ionic movement(s). Copyright © 2010 John Wiley & Sons, Ltd

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Photoelectron spectroscopy studies of SiO2/Si interfaces

Cited by 104 publications

References 93 publications

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities

XPS for probing the dynamics of surface voltage and photovoltage in GaN

Analysis of Fe nanoparticles using XPS measurements under d.c. or pulsed‐voltage bias

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