Photoelectrical properties of δ-Bi2O3 thin films

Agasiev, A. A.; Zeinally, A. Kh.; Alekperov, S.J.; Guseinov, Ya. Yu.

doi:10.1016/0025-5408(86)90160-1

Cited by 26 publications

(9 citation statements)

References 3 publications

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“…The band gap slightly shifts to high energy with further increasing the O 2 flow ratio. The band gaps obtained for the indirect allowed transition are much smaller than the value reported earlier [31], while that obtained for the direct allowed transition are less than but closed to the reported value [32]. From Fig.…”

Section: Resultscontrasting

confidence: 54%

δ-Bi2O3 thin films prepared by reactive sputtering: Fabrication and characterization

et al. 2006

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Section: Resultscontrasting

confidence: 54%

δ-Bi2O3 thin films prepared by reactive sputtering: Fabrication and characterization

et al. 2006

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“…6) the band gap energy is found to be about 1.98 eV and 2.2 eV. The band gaps obtained for the direct allowed transition are smaller but close to the reported values [4,8,9]. The results indicate that the indirect allowed transitions dominate in this bismuth oxide.…”

Section: And 200supporting

confidence: 80%

“…6. It is known from the literature that both transitions are allowed for various bismuth oxide phases [4,8,9]. Spectral calculations show that the indirect allowed transitions are not allowed.…”

Section: And 200mentioning

confidence: 94%

Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

2011

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In this work Bi 2 O 3 thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the Bi 2 O 3 films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.

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“…Also, there are a lot of reports regarding their preparation methods, structural characteristics and optical properties. As for the thin films of polycrystalline bismuth oxide, Agasiev et al prepared by a thermal evaporation method, followed by annealing in air [5]. George et al, Misho et al, G. Bandoli et al and Switzer, et al prepared them with activated reactive evaporation [6], chemical spray pyrolysis [7], metal organic chemical vapour deposition [8] and electrodeposition [9], respectively.…”

Section: Introductionmentioning

confidence: 99%

Growth of the Bi2O3 thin films under atmospheric pressure by means of halide CVD

Takeyama

Takahashi

Nakamura

et al. 2004

Journal of Physics and Chemistry of Solids

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Photoelectrical properties of δ-Bi2O3 thin films

Cited by 26 publications

References 3 publications

δ-Bi2O3 thin films prepared by reactive sputtering: Fabrication and characterization

δ-Bi2O3 thin films prepared by reactive sputtering: Fabrication and characterization

Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

Growth of the Bi2O3 thin films under atmospheric pressure by means of halide CVD

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