In this work Bi 2 O 3 thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the Bi 2 O 3 films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.

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Structural, electrical, and optical properties of nitrogen doped zinc oxide (ZnO:N) thin films deposited by direct current magnetron sputtering are analysed in this work. Nitrogen doping allows creation of p-type semiconducting ZnO thin films for their most important application as light emitting diodes. The scanning electron microscope images of sample crosssection show dense structure with columnar growth features. The X-ray diffraction patterns indicate semi-amorphous structure, explaining very low photoluminescence intensity. Optical transmittance measurements reveal significant changes in optical properties upon different amount of nitrogen doping. The resistance measurements in 30-90• C temperature range of ZnO:N thin films demonstrate similar to semiconductor behaviour and show resistance change up to 50%.