Synthesis of ZnO:N thin films by reactive dc magnetron sputtering

Abstract

Structural, electrical, and optical properties of nitrogen doped zinc oxide (ZnO:N) thin films deposited by direct current magnetron sputtering are analysed in this work. Nitrogen doping allows creation of p-type semiconducting ZnO thin films for their most important application as light emitting diodes. The scanning electron microscope images of sample crosssection show dense structure with columnar growth features. The X-ray diffraction patterns indicate semi-amorphous structure, explaining very low photoluminescence intensity. Optical transmittance measurements reveal significant changes in optical properties upon different amount of nitrogen doping. The resistance measurements in 30-90• C temperature range of ZnO:N thin films demonstrate similar to semiconductor behaviour and show resistance change up to 50%.