δ-Bi2O3 thin films prepared by reactive sputtering: Fabrication and characterization

Fan, Hong-Tao; Pan, Shanshan; Teng, X. M.; Ye, C.; Li, G.H.; Zhang, L.D.

doi:10.1016/j.tsf.2006.01.074

Cited by 101 publications

(63 citation statements)

References 32 publications

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“…10,11 The δ-Bi 2 O 3 is in equilibrium between 729 and 825 • C. 12 However, Fan et al reported that the nanocrystalline δ-Bi 2 O 3 thin films have been successfully prepared by radio-frequency (rf) reactive magnetron sputtering onto an Si (100) substrate using pure Bi as a target. 13 The nanocrystalline δ-Bi 2 O 3 thin films were obtained in a narrow window of deposition conditions. Achieving high conductivity for thermoelectric applications in Bi 2 O 3 thin films deposited at room temperature will require a new approach.…”

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confidence: 99%

Formation of Bismuth Nanocrystals in Bi₂O₃Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications

Eom

Jung

Han

et al. 2014

ECS J. Solid State Sci. Technol.

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Bismuth nanocrystals were embedded in amorphous Bi2O3 thin films grown under a nitrogen atmosphere at room temperature using pulsed laser deposition. As-grown Bi2O3-Bi thin films showed a high electrical conductivity of approximately 769 S/cm at 320 K, and the samples annealed in two steps at 200 and 300°C consisted of amorphous Bi2O3, bismuth nanocrystals in the crystallized β-Bi2O3 phase. The mixture phase of the bismuth nanocrystals and β-Bi2O3 enhanced the thermoelectric properties at room temperature. Samples annealed in two steps at 200 and 300°C showed an electrical conductivity of 833 S/cm, a Seebeck coefficient of –110 μV/K, a power factor of about 1.05 × 10−3 W/K2m. Formation of the bismuth nanocrystals in Bi2O3 thin films at low temperature made thermoelectric applications possible.

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confidence: 99%

Formation of Bismuth Nanocrystals in Bi₂O₃Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications

Eom

Jung

Han

et al. 2014

ECS J. Solid State Sci. Technol.

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“…6. It is known from the literature that both transitions are allowed for various bismuth oxide phases [4,8,9]. Spectral calculations show that the indirect allowed transitions are not allowed.…”

Section: And 200mentioning

confidence: 95%

“…Bismuth oxide has a few main polymorphic forms that are known as α, β, γ, δ [3,4]. All polymorphs have different crystal structure and various optical, electrical and mechanical properties.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

2011

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In this work Bi 2 O 3 thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the Bi 2 O 3 films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.

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“…Thin films of bismuth oxides have been obtained using such methods as electrodeposition, * E-mail: meydaneri@yahoo.com thermal evaporation under vacuum, sol-gel, pulsed laser deposition, etc., and their optical properties, formation of different phases and phase relations have been investigated [14][15][16][17][18][19][20][21]. However, none of them is as simple and economical as the method described in this study.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Tezel

Kariper

2017

Materials Science-Poland

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Bismuth oxide thin film was deposited by chemical bath deposition (CBD) technique onto a glass substrate. The grain size (D), dislocation density (δ) and number of crystallites per unit area (N), i.e. structural properties of the thin film were determined as 16 nm, 39.06 × 10 −4 line/nm 2 , 31.25 × 10 −3 1/nm 2 , respectively. Optical transmittance properties of the thin film were investigated by using a UV-Vis spectrophotometer. The optical band gap (E g ) for direct transitions, optical transmission (T %), reflectivity (R %), absorption, refractive index (n r ), extinction coefficient (k), dielectric constant ( ) of the thin film were found to be 3.77 eV, 25.23 %, 32.25 %, 0.59, 3.62, 0.04 and 2.80, respectively. The thickness of the film was measured by AFM, and was found to be 128 nm. Contact angles of various liquids on the oxide thin film were determined by Zisman method, and surface tension was calculated to be 31.95 mN/m.

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δ-Bi2O3 thin films prepared by reactive sputtering: Fabrication and characterization

Cited by 101 publications

References 32 publications

Formation of Bismuth Nanocrystals in Bi₂O₃Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications

Formation of Bismuth Nanocrystals in Bi₂O₃Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications

Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

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δ-Bi2O3 thin films prepared by reactive sputtering: Fabrication and characterization

Cited by 101 publications

References 32 publications

Formation of Bismuth Nanocrystals in Bi2O3Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications

Formation of Bismuth Nanocrystals in Bi2O3Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications

Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

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Formation of Bismuth Nanocrystals in Bi₂O₃Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications

Formation of Bismuth Nanocrystals in Bi₂O₃Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications